Characteristics and application of normally-off SiC-JFETs in converters without antiparallel diodes

IEEE Transactions on Power Electronics

Volumn 28, Issue 10, 2013, Pages 4850-4860

  Cai, Chaofeng ^a   Zhou, Weicheng ^a   Sheng, Kuang ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

Antiparallel diodes; JFET; reverse recovery; silicon carbide; synchronous rectification

Indexed keywords

ANTI-PARALLEL DIODES; CHANNEL STRUCTURES; DYNAMIC PERFORMANCE; GATE DRIVER CIRCUIT; GATE-TO-SOURCE VOLTAGES; REVERSE CHARACTERISTICS; REVERSE RECOVERY; SYNCHRONOUS RECTIFICATION;

DC-DC CONVERTERS; DIODES; JUNCTION GATE FIELD EFFECT TRANSISTORS;

SILICON CARBIDE;

EID: 84875591576     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2012.2237417     Document Type: Article

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