New MEGA POWER DUAL™ IGBT module with advanced 1200 V CSTBT chip

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

Volumn 3, Issue , 2002, Pages 2159-2164

  Yamada, Junji ^a   Yu, Yoshiharu ^a   Donlon, John F ^b   Motto, Eric R ^b  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b POWEREX INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC INVERTERS; ELECTRIC LOSSES; INDUCTANCE; MICROPROCESSOR CHIPS;

CARRIER STORED TRENCH BIPOLAR TRANSISTORS (CSTBT);

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0036446499     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. H. Takahashi, et al. "Carrier Stored Trench-Gate Bipolar Transistor (CSTBT) - A Novel Power Device for High Voltage Application' The 8th International Symposium on Power Semiconductor Devices and ICs 1996.
2. E. Motto, et al. "Characteristics of a 1200 V PT IGBT With Trench Gate and Local Life Time Control", IEEE Industry Applications Society 1998.
3. H. Iwamoto, et al. "A New Punch Through IGBT Having A New N-Buffer Layer" IEEE Industry Applications Society 1999.
4. H. Nakamura, et al. "Wide cell pitch 1200 V NPT CSTBTs With Short-Circuit Ruggedness" International Symposium on Power Semiconductor Devices and ICs 2001.