Long-term operation and reliability study of a 1200-V, 880-A all-SiC dual module

SPEEDAM 2012 - 21st International Symposium on Power Electronics, Electrical Drives, Automation and Motion

Volumn , Issue , 2012, Pages 1520-1525

  Wood, R A ^a   Salem, T E ^b  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b UNITED STATES NAVAL ACADEMY   (United States)

Author keywords

power conversion; power MOSFET; semiconductor device reliability; Silicon carbide

Indexed keywords

DEGREE OF STABILITY; DESIGN ENGINEERS; HIGH-CURRENT; JUNCTION TEMPERATURES; LONG-TERM OPERATION; MOS-FET; MOSFETS; OPERATING TEMPERATURE; PAPER DOCUMENTS; POWER CONVERSION; POWER ELECTRONIC SYSTEMS; POWER MOSFET; RESEARCH ACTIVITIES; RUNTIMES; SEMICONDUCTOR DEVICE RELIABILITY; STATE OF THE ART; SWITCHING ENERGY;

LEAKAGE CURRENTS; MOSFET DEVICES; POWER ELECTRONICS; RELIABILITY;

SILICON CARBIDE;

EID: 84866940767     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SPEEDAM.2012.6264530     Document Type: Conference Paper

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