Reliability concerns in contemporary SiC power devices

2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

Volumn , Issue , 2003, Pages 368-369

  Singh, Ranbir ^a   Hefner, Allen R ^a   McNutt, Ty R ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON CARBIDE;

HIGH POWER; HIGH TEMPERATURE DEVICE; POWER DEVICES;

SEMICONDUCTOR DEVICES;

EID: 84885543826     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISDRS.2003.1272139     Document Type: Conference Paper

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