Accelerated test for reliability analysis of SiC diodes

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2009, Pages 267-270

  Banu, Viorel ^a   Jordá, Xavier ^a   Montserrat, Josep ^a   Godignon, Philippe ^a   Millán, José ^a   Brosselard, Pierre ^b  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^b Univ Claude Bernard Lyon1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATED TESTS; BONDING TECHNOLOGY; CONSTANT CURRENT; DISSIPATED ENERGY; HIGH TEMPERATURE; NEW CONCEPT; POWER CYCLING; RELIABILITY TEST; SELF-HEATING; SIC DIODES; SINUSOIDAL CURRENTS; SURGE CURRENT; TEST BENCHES; WIRE BONDING; WIRE BONDING TECHNOLOGY;

INTEGRATED CIRCUITS; POWER ELECTRONICS; QUALITY ASSURANCE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DIODES; SEMICONDUCTOR SWITCHES; SILICON CARBIDE; TESTING; WIRE;

RELIABILITY ANALYSIS;

EID: 77949983902     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2009.5158053     Document Type: Conference Paper

References (7)

1. V. Banu, P. Brosselard, X. Jorda, J. Montserrat, P. Godignon, J. Millan, "Behaviour of 1.2 kV SiC JBS diodes under repetitive high power stress", Microelectronics Reliability Volume 48, Issues 8-9, 19th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2008), August-September 2008, Pages 1444 -1448.
2. J. Millán,V. Banu, P. Brosselard, X. Jordà, A. Pérez-Tomás, and P. Godignon, " Electrical Performance at High Temperature and Surge Current of 1.2 kV Power Rectifiers: Comparison between Si PiN, 4H-SiC Schottky and JBS Diodes, International Semiconductor Conference, 2008. CAS 2008 Proceedings, pp.53-59.
3. P. Brosselard, N. Camara, V. Banu, X. Jordà, M. Vellvehi, P. Godignon, J. Millán, "Bipolar Conduction Impact on Electrical Characteristics and Reliability of 1.2- and 3.5-kV 4H-SiC JBS Diodes", IEEE Transactions on Electron Devices, vol. 55, NO. 8, August 2008, pp. 1847-1856.
4. R. Rupp, M. Treu, S. Voss, F. Bjork, and T. Reimann, "2nd Generation" SiC Schottky diodes: A new benchmark in SiC device ruggedness," in Power Semiconductor Devices and IC's, 2006 IEEE International Symposium on, 2006, pp. 1-4.
5. M. Holz, G. Hultsch, T. Scherg, and R. Rupp, "Reliability considerations for recent Infineon SiC diode releases," Microelectronics Reliability, vol. 47, pp. 1741-1745, 2007.
6. P. Brosselard, X. Jordà, M. Vellvehí, A. Perez Tomas, P. Godignon, and M. J., "1.2 kV Rectifiers Thermal Behaviour: comparison between Si PiN, 4H-SiC Schottky and JBS diodes," in European Power Electronic conference, Aalborg DK, 2007.
7. M.Mermet-Guyennet, X. Perpinya, M.Piton, "Revisiting power cycling test for better prediction in traction ",Microelectronics Reliability 47 (2007), pp.1690-1695.