Reliability of wide bandgap semiconductor power switching devices

Proceedings of the IEEE 2010 National Aerospace and Electronics Conference, NAECON 2010

Volumn , Issue , 2010, Pages 322-327

  Shenai, Krishna ^a  

^a Toledo   (United States)

Author keywords

Fieldreliability; Gallium nitride (GaN); Material defects; Silicon carbide (SiC)

Indexed keywords

BULK MATERIALS; FIELDRELIABILITY; MATERIAL DEFECTS; POWER SWITCHING DEVICES; REACTIVE LOADS; REVERSE BIAS; TERM FIELD; WIDE-BAND-GAP SEMICONDUCTOR;

DEFECTS; SEMICONDUCTOR DEVICES; SILICON CARBIDE;

GALLIUM NITRIDE;

EID: 79952690230     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NAECON.2010.5712971     Document Type: Conference Paper

References (17)

1. K. Shenai, R. S. Scott and B. J. Baliga, "Optimum semiconductors for high-power electronics," IEEE Trans. Electron Devices, vol. 36, no. 9, pp. 1811-1823, Sept. 1989. (Pubitemid 20617811)
2. K. Shenai, P. G. Neudeck and G. Schwarze, "Design and Technology of Compact High-Power Converters," IEEE Aerospace and Electronic Systems Magazine, vol. 16, no. 3, pp 27-31, March 2001 (invited). (Pubitemid 32286893)
3. K. Shenai, "Made-to-order Power Electronics," IEEE Spectrum, vol. 37, no.7, pp. 50-55, July 2000 (invited).
4. K. Shenai, P. J. Singh, S. Rao, D. Sorenson, K. Chu, and G. Gaylon, "On the Reliability of DC-DC Power Converters," Intersociety Energy Conversion Engineering Conference (IECEC), pp. 1480-1490, 2000.
5. K. Shenai, P. J. Singh, S. Rao, D. Sorenson, K. Chu, and G. Gaylon, "Power Supply Design for Performance and Reliability," in Proc. National Aerospace Electronics Conf. (NAECON), pp. 524-531, 2000. (Pubitemid 32873252)
6. N. Keskar, M. Trivedi, and K. Shenai," Device Reliability and Robust Power Converter Development," in Proc. European Symp. Reliability ofElectron Devices, Failure Physics and Analysis (ESREF), pp. 1121-1130, 1999. (Pubitemid 129304843)
7. N. Keskar, M. Trivedi, and K. Shenai,"Dynamic SOA of Power MOSFETs," in Dig. IEEE Industrial Applications Society (IAS) Ann. Mtg., pp. 1098-1102, 1999. (Pubitemid 30544105)
8. P. G. Neudeck, "Progress in Silicon Carbide Semiconductor Electronics Technology", J. Electronic Materials, vol. 24, no. 4, pp. 283-288, April 1995.
9. H. Lendenmann, F. Dahlquist, N. Johansson, R. Soderholm, P. A. Nilsson, J. P. Bergman and P. Skytt: Mater. Sci. Forum, vol. 353-356, p. 727, 2001.
10. K. Acharya and K. Shenai, "On the dv/dt Rating of SiC Schottky PowerRectifiers," in Proc. Power Electronics Technology Conference, pp. 672-677, October 2002.
11. Kimoto et. al., IEEE Trans. Electron Devices, vol. 46 (3), p. 471, 1999.
12. K. Shenai, "Power Semiconductor Manufacturer SOA Specifications Require Updating," PCIM, vol. 26, No. 12, pp. 26-32, December 2000 (invited).
13. Ilia Zverev, "SiC Schottky Diodes Improve Boost Converter Performance," Power Electronics Technology, 2003.
14. J.D. Caldwell, R.E. Stahlbush, K.D. Hobart, and O.J. Glembocki, "Dynamics of Forward Voltage Drift in 4H-SiC PiN Diodes," Electronics Science and Technology Division, Electronics and Electromagnetics, NRL Review, pp. 153-155, 2008.
15. J. A. Powell, P. G. Neudeck, D. J. Larkin, J. W. Yang and P. Pirouz, "Investigation of defects in epitaxial 3C-SiC, 4H-SiC and 6H-SiC films grown on SiC substrates", Ins. Phys. Conf. Ser., vol. 137, pp. 161-164, 1994.
16. K. Chinnaswamy, P. Khandelwal, M. Trivedi, and K.Shenai, "Unclamped Inductive Switching Dynamics in Lateral and Vertical Power DMOSFETs," in Dig. IEEE Industrial Applications Society (IAS) Ann. Mtg., pp. 1085-1092, 1999. (Pubitemid 30544103)
17. M. Dudley, N. Zhang, Y. Zhang, B. Raghothamachar, S. Byrappa, G. Choi1, E. K. Sanchez, D. Hansen, R. Drachev, and M.J. Loboda, "Characterization of 100 mm Diameter 4H-Silicon Carbide Crystals With Extremely Low Basal Plane Dislocation Density." Materials Science Forum, vols. 645-648, pp 291-294, 2010.