Origin of visible and near-infrared photoluminescence from chemically etched Si nanowires decorated with arbitrarily shaped Si nanocrystals

Nanotechnology

Volumn 25, Issue 4, 2014, Pages

  Ghosh, Ramesh ^a   Giri, P K ^a,b   Imakita, Kenji ^b   Fujii, Minoru ^b  

^a INDIAN INSTITUTE OF TECHNOLOGY GUWAHATI   (India)

^b KOBE UNIVERSITY   (Japan)

Author keywords

photoluminescence; quantum confinement; Si nanowire

Indexed keywords

CROSS SECTIONAL AREA; ELECTRON HOLE PLASMA; NON-RADIATIVE RECOMBINATIONS; NONRADIATIVE DEFECTS; RADIATIVE RECOMBINATION; SI NANOWIRE; SINGLE-CRYSTALLINE; VISIBLE AND NEAR INFRARED;

INFRARED DEVICES; NANOCRYSTALS; NANOWIRES; PHOTOLUMINESCENCE; QUANTUM CONFINEMENT; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; WET ETCHING;

SILICON;

METAL; NANOPARTICLE; NANOWIRE; SILICON; SILVER;

ARTICLE; CHEMISTRY; ELECTRON; GENETIC PROCEDURES; LUMINESCENCE; METHODOLOGY; NANOTECHNOLOGY; NEAR INFRARED SPECTROSCOPY; OPTICS; PARTICLE SIZE; PHOTOCHEMISTRY; POROSITY; RAMAN SPECTROMETRY; SCANNING ELECTRON MICROSCOPY; SURFACE PROPERTY; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY;

BIOSENSING TECHNIQUES; ELECTRONS; LUMINESCENCE; METALS; MICROSCOPY, ELECTRON, SCANNING; MICROSCOPY, ELECTRON, TRANSMISSION; NANOPARTICLES; NANOTECHNOLOGY; NANOWIRES; OPTICS AND PHOTONICS; PARTICLE SIZE; PHOTOCHEMISTRY; POROSITY; SILICON; SILVER; SPECTROSCOPY, NEAR-INFRARED; SPECTRUM ANALYSIS, RAMAN; SURFACE PROPERTIES; TEMPERATURE;

EID: 84891890779     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/25/4/045703     Document Type: Article

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