Effect of hydrofluoric acid concentration on the evolution of photoluminescence characteristics in porous silicon nanowires prepared by Ag-assisted electroless etching method

Journal of Applied Physics

Volumn 112, Issue 3, 2012, Pages

  Najar, A ^a   Slimane, A B ^a   Hedhili, M N ^a   Anjum, D ^a   Sougrat, R ^a   Ng, T K ^a   Ooi, B S ^a  

^a KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

Author keywords

[No Author keywords available]

Indexed keywords

ACID CONCENTRATIONS; AG CATALYSTS; AMORPHOUS SILICA; ANTI-REFLECTION; DEFECT STATE; ELECTROLESS; ETCHING METHOD; HF CONCENTRATION; PEAK SHIFT; PHOTOLUMINESCENCE CHARACTERISTICS; PHOTOLUMINESCENCE SIGNALS; PL EMISSION; QUALITATIVE MODEL; QUANTUM CONFINEMENT EFFECTS; SI NANOCRYSTALLITES; SILICON NANOCRYSTALLITES; SILICON NANOWIRES; SILICON-BASED; STRUCTURAL AND OPTICAL PROPERTIES; SURFACE OXIDE;

HYDROFLUORIC ACID; NANOWIRES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; POROUS SILICON; SILICA; SILICON; SURFACE DEFECTS;

AMORPHOUS SILICON;

EID: 84865225318     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4740051     Document Type: Article

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