Raman spectroscopy of oxide-embedded and ligand-stabilized silicon nanocrystals

Journal of Physical Chemistry Letters

Volumn 3, Issue 9, 2012, Pages 1089-1093

  Hessel, Colin M ^a   Wei, Junwei ^b   Reid, Dariya ^a   Fujii, Hiromasa ^c   Downer, Michael C ^b   Korgel, Brian A ^a  

^a The University of Texas at Austin   (United States)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ASYMMETRIC PEAK; BOND POLARIZABILITY; LIGAND-STABILIZED; LOWER FREQUENCIES; RAMAN ACTIVE MODES; RAMAN PEAK SHIFTS; SILICON NANOCRYSTALS; SIZE DEPENDENCE; STRESS-INDUCED;

NANOCRYSTALS; RAMAN SPECTROSCOPY; SILICON;

RAMAN SCATTERING;

EID: 84860534803     PISSN: None     EISSN: 19487185     Source Type: Journal    
DOI: 10.1021/jz300309n     Document Type: Article

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