Electronic structure study of ion-implanted Si quantum dots in a SiO 2 matrix: Analysis of quantum confinement theories

Physical Review B - Condensed Matter and Materials Physics

Volumn 83, Issue 3, 2011, Pages

  Barbagiovanni, E G ^a   Goncharova, L V ^a   Simpson, P J ^a  

^a UNIVERSITY OF WESTERN ONTARIO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 79551578646     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.83.035112     Document Type: Article

References (58)

1. Editorial, Nature Nanotechnology 1748-3387 10.1038/nnano.2010.127 5, 381 (2010).
2. W. D. Heiss, ed., Quantum Dots: A Doorway to Nanoscale Physics (Springer, Berlin, 2005).
3. X. Y. Lang, W. T. Zheng, and Q. Jiang, IEEE Trans. Nanotechnology 1536-125X 10.1109/TNANO.2007.913426 7, 5 (2008).
4. A. Zunger, Phys. Status Solidi B PSSBBD 0370-1972 10.1002/(SICI)1521- 3951(200104)224:3<727::AID-PSSB727>3.0.CO;2-9 224, 727 (2001).
5. J. Linnros, N. Lalic, A. Galeckas, and V. Grivickas, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.371663 86, 6128 (1999).
6. D. J. Lockwood and L. Pavesi, in Silicon Photonics, Vol. 94, edited by, D. J. Lockwood, and, L. Pavesi, (Springer, Berlin, 2004), pp. 1-52.
7. V. A. Belyakov, V. A. Burdov, R. Lockwood, and A. Meldrum, in Advances in Optical Technologies, Vol. 279502, edited by, D.Lockwood, (2008), pp. 1-32.
8. K. S. Min, K. V. Shcheglov, C. M. Yang, H. A. Atwater, M. L. Brongersma, and A. Polman, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.116870 69, 2033 (1996).
9. D. Kovalev, H. Heckler, M. Ben-Chorin, G. Polisski, M. Schwartzkopff, and F. Koch, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.81.2803 81, 2803 (1998).
10. A. D. Zdetsis, Rev. Adv. Mater. Sci. 11, 56 (2006).
11. A. D. Zdetsis, Rev. Adv. Mater. Sci. 11, 56 (2006). (Pubitemid 41807709)
12. N. B. Nguyen, C. Dufour, and S. Petit, J. Phys. Condens. Matter JCOMEL 0953-8984 10.1088/0953-8984/20/45/455209 20, 455209 (2008).
13. Z. Pu-Qin, H. Dong-Sheng, and W. Xing-Long, Chin. Phys. Lett. CPLEEU 0256-307X 10.1088/0256-307X/22/6/054 22, 1492 (2005). (Pubitemid 40763029)
14. M. Nishida, Semicond. Sci. Technol. SSTEET 0268-1242 10.1088/0268-1242/ 21/4/006 21, 443 (2006).
15. N. C. Bacalis and A. D. Zdetsis, J. Math. Chem. JMCHEG 0259-9791 10.1007/s10910-009-9557-x 46, 962 (2009).
16. E. G. Barbagiovanni, L. V. Goncharova, P. J. Simpson, and N.Armstrong, in Excitons and Plasmon Resonances in Nanostructures II, edited by, A. O. Govorov, A. L. Rogach, Z. M. Wang, J.-K. Wang, V. M. Shalaev, Mater. Res. Soc. Symp. Proc. 1208E (Warrendale, PA, 2010), p. 1208.
17. C. Bonafos, B. Colombeau, A. Altibelli, M. Carrada, G. B. Assayag, B. Garrido, M. López, A. Pérez-Rodríguez, J. R. Morante, and A. Claverie, Nucl. Instrum. Methods Phys. Res., Sect. B NIMBEU 0168-583X 10.1016/S0168-583X(01)00497-9 178, 17 (2001). (Pubitemid 32513631)
18. D. B. Tran Thoai, Y. Z. Hu, and S. W. Koch, Phys. Rev. B NIMBEU 1098-0121 10.1103/PhysRevB.42.11261 42, 11261 (1990).
19. L. W. Wang and A. Zunger, J. Phys. Chem. JPCHAX 0022-3654 10.1021/j100059a032 98, 2158 (1994).
20. C. R. Mokry, P. J. Simpson, and A. P. Knights, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.3130103 105, 114301 (2009).
21. M. Molinari, H. Rinnert, M. Vergnat, and P. Weisbecker, Mater. Sci. Eng. B MSBTEK 0921-5107 10.1016/S0921-5107(02)00715-8 101, 186 (2003).
22. M. López, B. Garrido, C. García, P. Pellegrino, A. Pérez-Rodríguez, J. R. Morante, C. Bonafos, M. Carrada, and A. Claverie, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1456970 80, 1637 (2002). (Pubitemid 34268856)
23. T. Shimizu-Iwayama, N. Kurumado, D. E. Hole, and P. D. Townsend, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.367469 83, 6018 (1998).
24. B. Garrido, M. López, O. González, A. Pérez- Rodríguez, J.R. Morante, and C. Bonafos, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1325392 77, 3143 (2000).
25. B. Garrido, M. López, A. Pérez-Rodríguez, C. García, P. Pellegrino, R. Ferrè, J. A. Moreno, J. R. Morante, C. Bonafos, M. Carrada, A. Claverie, J. de la Torre, and A. Souifi, Nucl. Instrum. Methods Phys. Res., Sect. B NIMBEU 0168-583X 10.1016/j.nimb.2003.11.037 216, 213 (2004).
26. L. Nikolova, R. G. Saint-Jacques, C. Dahmounea, and G. G. Ross, Surf. Coat. Technol. SCTEEJ 0257-8972 10.1016/j.surfcoat.2009.02.061 203, 2501 (2009).
27. S. Schuppler, S. L. Friedman, M. A. Marcus, D. L. Adler, Y. H. Xie, F. M. Ross, Y. J. Chabal, T. D. Harris, L. E. Brus, W. L. Brown, E. E. Chaban, P. F. Szajowski, S. B. Christman, and P. H. Citrin, Phys. Rev. B SCTEEJ 1098-0121 10.1103/PhysRevB.52.4910 52, 4910 (1995).
28. H. Z. Song and X. M. Bao, Phys. Rev. B SCTEEJ 1098-0121 10.1103/PhysRevB.55.6988 55, 6988 (1997).
29. L. K. Pan, C. Q. Sun, B. K. Tay, T. P. Chen, and S. Li, J. Phys. Chem. B JPCBFK 1520-6106 10.1021/jp0266805 106, 11725 (2002). (Pubitemid 35384792)
30. A. Dane, U. K. Demirok, A. Aydinli, and S. Suzer, J. Phys. Chem. B JPCBFK 1520-6106 10.1021/jp0545748 110, 1137 (2006).
31. J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Matter (Pergamon Press, New York, 1985).
32. N. Fairley, © Casa Software Ltd., Version 2.3.15 (2009) [http://www.casaxps.com/].
33. V. Levitcharsky, R. G. Saint-Jacques, Y. Q. Wang, L. Nikolova, R.Smirani, and G. G. Ross, Surf. Coat. Technol. SCTEEJ 0257-8972 10.1016/j.surfcoat.2006. 06.057 201, 8547 (2007). (Pubitemid 47074291)
34. A. Hundertmark, The Size Distribution and Photoluminescence Spectroscopy of Silicon Nanocrystals, Master's thesis, Royal Institute of Technology, Sweden, 2008.
35. M. L. Brongersma, A. Polman, K. S. Min, and H. A. Atwater, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.370800 86, 759 (1999).
36. J. Derr, K. Dunn, D. Riabinina, F. Martin, M. Chaker, and F. Rosei, Physica E PELNFM 1386-9477 10.1016/j.physe.2008.11.008 41, 668 (2009).
37. V. Ranjan, M. Kapoor, and V. A. Singh, J. Phys. Condens. Matter JCOMEL 0953-8984 10.1088/0953-8984/14/26/305 14, 6647 (2002). (Pubitemid 34789793)
38. V. I. Klimov, C. J. Schwarza, D. W. McBranch, and C. W. White, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.122519 73, 2603 (1998). (Pubitemid 128674010)
39. C. Garcia, B. Garrido, P. Pellegrino, R. Ferre, J. A. Moreno, J. R. Morante, L. Pavesi, and M. Cazzanelli, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1558894 82, 1595 (2003).
40. H. Rinnert, M. Vergnat, and A. Burneau, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1330557 89, 237 (2001). (Pubitemid 33703370)
41. G. Ledoux, J. Gong, F. Huisken, O. Guillois, and C. Reynaud, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1485302 80, 4834 (2002). (Pubitemid 34783184)
42. C. Delerue, G. Allan, and M. Lannoo, Phys. Rev. B APPLAB 1098-0121 10.1103/PhysRevB.48.11024 48, 11024 (1993).
43. T. P. Chen, Y. Liu, C. Q. Sun, M. S. Tse, J. H. Hsieh, Y. Q. Fu, Y.C. Liu, and S. Fung, J. Phys. Chem. 108, 16609 (2004).
44. G. A. Kachurin, S. G. Yanovskaya, V. A. Volodin, V. G. Kesler, A.F. Leier, and M. O. Ruault, Semiconductors SMICES 1063-7826 10.1134/1.1485663 36, 647 (2002).
45. M. L. Green, E. P. Gusev, R. Degraeve, and E. L. Garfunkel, J.Appl. Phys. JAPIAU 0021-8979 10.1063/1.1385803 90, 2057 (2001).
46. O. Renault, R. Marlier, M. Gely, B. D. Salvo, T. Baron, M. Hansson, and N. T. Barrett, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2105990 87, 163119 (2005). (Pubitemid 41721893)
47. D. J. Miller, M. C. Biesinger, and N. S. McIntyre, Surf. Interface Anal. SIANDQ 0142-2421 10.1002/sia.1188 33, 299 (2002). (Pubitemid 34308079)
48. 2; therefore, it may not properly account for any possible shift in the Si 2 p peak. However, if we look at the shift in C 1 s and Si 2 p, we see that all peaks shift by the same amount, within experimental error; see Tables II and III. If our correction method is overcompensating for the shift in the peak, we should still expect to see differences from sample to sample.
49. S. Kim, M. C. Kim, S. Cho, K. J. Kim, H. N. Hwang, and C. C. Hwang, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2776014 91, 103113 (2007). (Pubitemid 47379066)
50. C. Q. Sun, L. K. Pan, Y. Q. Fu, B. K. Tay, and S. Li, J. Phys. Chem. B JPCBFK 1520-6106 10.1021/jp0272015 107, 5113 (2003).
51. D. Riabinina, C. Durand, J. Margot, M. Chaker, G. A. Botton, and F. Rosei, Phys. Rev. B JPCBFK 1098-0121 10.1103/PhysRevB.74.075334 74, 075334 (2006). (Pubitemid 44310579)
52. T. van Buuren, L. N. Dinh, L. L. Chase, W. J. Siekhaus, and L. J. Terminello, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.80.3803 80, 3803 (1998).
53. F. Djurabekova and K. Nordlund, Phys. Rev. B PRLTAO 1098-0121 10.1103/PhysRevB.77.115325 77, 115325 (2008).
54. R. Soulairol and F. Cleri, Solid State Sci. SSSCFJ 1293-2558 10.1016/j.solidstatesciences.2009.05.004 12, 163 (2010).
55. S. M. F. Agulló-Rueda, J. D. Moreno, F. Ben-Hander, and J. M. Martínez-Duart, Thin Solid Films THSFAP 0040-6090 10.1016/S0040-6090(01) 01641-8 401, 306 (2001). (Pubitemid 33126200)
56. S. Öǧüt, J. R. Chelikowsky, and S. G. Louie, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.79.1770 79, 1770 (1997).
57. M. T. Björk, H. Schmid, J. Knoch, H. Riel, and W. Riess, Nature Nanotechnology PRLTAO 1748-3387 10.1038/nnano.2008.400 4, 103 (2009).
58. P. Y. Yu and M. Cardona, Fundamentals of Semiconductors: Physical and Material Properties, 3rd ed. (Springer, Berlin, 2001).