Origin of visible photoluminescence from arrays of vertically arranged Si-nanopillars decorated with Si-nanocrystals

Nanotechnology

Volumn 23, Issue 47, 2012, Pages

  Kuznetsov, A S ^a   Shimizu, T ^b   Kuznetsov, S N ^c   Klekachev, A V ^a,d   Shingubara, S ^b   Vanacken, J ^a   Moshchalkov, V V ^a  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b KANSAI UNIVERSITY   (Japan)

^c PETROZAVODSK STATE UNIVERSITY   (Russian Federation)

^d imec   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

AVERAGE DIAMETER; CRYSTALLINE SILICONS; DEFECT SITES; EMISSION MAXIMA; FTIR; GAUSSIAN SHAPE; LUMINESCENCE LIFETIME; LUMINESCENCE QUENCHING; NANO-PILLAR ARRAYS; NANOPILLARS; RADIATIVE RECOMBINATION; RED SHIFT; SI NANOCRYSTAL; TEMPERATURE DEPENDENCE; UV PHOTONS; UV-OZONE; VERTICALLY ALIGNED; VISIBLE EMISSIONS; VISIBLE PHOTOLUMINESCENCE;

LUMINESCENCE; NANOSTRUCTURES; NONVOLATILE STORAGE; OZONE; SILICON OXIDES; WET ETCHING;

SILICON;

EID: 84868325416     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/47/475709     Document Type: Article

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