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Journal of Applied Physics

Volumn 110, Issue 7, 2011, Pages

Photoluminescence origins of the porous silicon nanowire arrays

(6) Lin, L H a Sun, X Z a Tao, R a Li, Z C a Feng, J Y a Zhang, Z J a

a TSINGHUA UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

BLUE SHIFT; DIFFERENT ORIGINS; ELECTROLESS; EMISSION BANDS; EMISSION ENERGIES; ETCHING METHOD; EXCITATION SOURCES; MAXIMUM INTENSITIES; NEAR INFRARED; OXIDE LAYER; PEAK POSITION; PL BANDS; RED EMISSION BAND; SI NANOSTRUCTURES; SILICON NANOWIRE ARRAYS; SILICON NANOWIRES; STATE TRANSITIONS;

NANOWIRES; PHOTOLUMINESCENCE;

POROUS SILICON;

EID: 80055022725 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3645049 Document Type: Article

Times cited : (47)

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