-
1
-
-
36849118041
-
-
JAPIAU 0021-8979 10.1063/1.1713143
-
R. S. Wagner, W. C. Ellis, K. A. Jackson, and S. M. Arnold, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1713143 35, 2993 (1964).
-
(1964)
J. Appl. Phys.
, vol.35
, pp. 2993
-
-
Wagner, R.S.1
Ellis, W.C.2
Jackson, K.A.3
Arnold, S.M.4
-
2
-
-
33751122778
-
-
APPLAB 0003-6951 10.1063/1.1753975
-
R. S. Wagner and W. C. Ellis, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1753975 4, 89 (1964).
-
(1964)
Appl. Phys. Lett.
, vol.4
, pp. 89
-
-
Wagner, R.S.1
Ellis, W.C.2
-
3
-
-
0034511724
-
Silicon nanowires: preparation, device fabrication, and transport properties
-
DOI 10.1021/jp002595q
-
J.-Y. Yu, S.-W. Chung, and J. R. Heath, J. Phys. Chem. B JPCBFK 1520-6106 10.1021/jp002595q 104, 11864 (2000). (Pubitemid 32084924)
-
(2000)
Journal of Physical Chemistry B
, vol.104
, Issue.50
, pp. 11864-11870
-
-
Yu, J.-Y.1
Chung, S.-W.2
Heath, J.R.3
-
4
-
-
0032498174
-
A laser ablation method for the synthesis of crystalline semiconductor nanowires
-
DOI 10.1126/science.279.5348.208
-
A. M. Morales and C. M. Lieber, Science SCIEAS 0036-8075 10.1126/science.279.5348.208 279, 208 (1998). (Pubitemid 28103874)
-
(1998)
Science
, vol.279
, Issue.5348
, pp. 208-211
-
-
Morales, A.M.1
Lieber, C.M.2
-
5
-
-
0033887818
-
-
ADVMEW 0935-9648 10.1002/(SICI)1521-4095(200002)12:4<298::AID- ADMA298>3.0.CO;2-Y
-
X. Duan and C. M. Lieber, Adv. Mater. ADVMEW 0935-9648 10.1002/(SICI)1521-4095(200002)12:4<298::AID-ADMA298>3.0.CO;2-Y 12, 298 (2000).
-
(2000)
Adv. Mater.
, vol.12
, pp. 298
-
-
Duan, X.1
Lieber, C.M.2
-
6
-
-
33749657116
-
2-catalyzed silicon nanowires
-
DOI 10.1021/nl061287m
-
A. R. Guichard, D. N. Barsic, S. Sharma, T. I. Kamins, and M. L. Brongersma, Nano Lett. NALEFD 1530-6984 10.1021/nl061287m 6, 2140 (2006). (Pubitemid 44555267)
-
(2006)
Nano Letters
, vol.6
, Issue.9
, pp. 2140-2144
-
-
Guichard, A.R.1
Barsic, D.N.2
Sharma, S.3
Kamins, T.I.4
Brongersma, M.L.5
-
7
-
-
58149456924
-
-
PRBMDO 1098-0121 10.1103/PhysRevB.78.235422
-
A. R. Guichard, R. D. Kekatpure, M. L. Brongersma, and T. I. Kamins, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.78.235422 78, 235422 (2008).
-
(2008)
Phys. Rev. B
, vol.78
, pp. 235422
-
-
Guichard, A.R.1
Kekatpure, R.D.2
Brongersma, M.L.3
Kamins, T.I.4
-
8
-
-
0008813837
-
-
PRLTAO 0031-9007 10.1103/PhysRevLett.82.197
-
M. V. Wolkin, J. Jorne, P. M. Fauchet, G. Allan, and C. Delerue, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.82.197 82, 197 (1999).
-
(1999)
Phys. Rev. Lett.
, vol.82
, pp. 197
-
-
Wolkin, M.V.1
Jorne, J.2
Fauchet, P.M.3
Allan, G.4
Delerue, C.5
-
9
-
-
57049147972
-
-
APPLAB 0003-6951 10.1063/1.3021359
-
O. Demichel, F. Oehler, P. Noé, V. Calvo, N. Pauc, P. Gentile, T. Baron, D. Peyrade, and N. Magnea, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.3021359 93, 213104 (2008).
-
(2008)
Appl. Phys. Lett.
, vol.93
, pp. 213104
-
-
Demichel, O.1
Oehler, F.2
Noé, P.3
Calvo, V.4
Pauc, N.5
Gentile, P.6
Baron, T.7
Peyrade, D.8
Magnea, N.9
-
10
-
-
67650360742
-
-
NALEFD 1530-6984 10.1021/nl900739a
-
O. Demichel, V. Calvo, N. Pauc, A. Besson, P. Noé, F. Oehler, P. Gentile, and N. Magnea, Nano Lett. NALEFD 1530-6984 10.1021/nl900739a 9, 2575 (2009).
-
(2009)
Nano Lett.
, vol.9
, pp. 2575
-
-
Demichel, O.1
Calvo, V.2
Pauc, N.3
Besson, A.4
Noé, P.5
Oehler, F.6
Gentile, P.7
Magnea, N.8
-
11
-
-
77955328642
-
-
NALEFD 1530-6984 10.1021/nl903166t
-
O. Demichel, V. Calvo, A. Besson, P. Noé, B. Salem, N. Pauc, F. Oehler, P. Gentile, and N. Magnea, Nano Lett. NALEFD 1530-6984 10.1021/nl903166t 10, 2323 (2010).
-
(2010)
Nano Lett.
, vol.10
, pp. 2323
-
-
Demichel, O.1
Calvo, V.2
Besson, A.3
Noé, P.4
Salem, B.5
Pauc, N.6
Oehler, F.7
Gentile, P.8
Magnea, N.9
-
12
-
-
17044431082
-
X-ray diffraction measurements of internal strain in Si nanowires fabricated using a self-limiting oxidation process
-
DOI 10.1063/1.1864245, 071903
-
T. Shimura, K. Yasutake, M. Umeno, and M. Nagase, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1864245 86, 071903 (2005). (Pubitemid 40495342)
-
(2005)
Applied Physics Letters
, vol.86
, Issue.7
, pp. 1-3
-
-
Shimura, T.1
Yasutake, K.2
Umeno, M.3
Nagase, M.4
-
13
-
-
33645757830
-
-
JMIYET 1057-7157 10.1109/JMEMS.2005.859092
-
M.-C. Lee and M. Wu, J. Microelectromech. Syst. JMIYET 1057-7157 10.1109/JMEMS.2005.859092 15, 338 (2006).
-
(2006)
J. Microelectromech. Syst.
, vol.15
, pp. 338
-
-
Lee, M.-C.1
Wu, M.2
-
14
-
-
33644607633
-
-
JAPIAU 0021-8979 10.1063/1.2171785
-
H. Coffin, C. Bonafos, S. Schamm, N. Cherkashin, G. B. Assayag, A. Claverie, M. Respaud, P. Dimitrakis, and P. Normand, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2171785 99, 044302 (2006).
-
(2006)
J. Appl. Phys.
, vol.99
, pp. 044302
-
-
Coffin, H.1
Bonafos, C.2
Schamm, S.3
Cherkashin, N.4
Assayag, G.B.5
Claverie, A.6
Respaud, M.7
Dimitrakis, P.8
Normand, P.9
-
15
-
-
79961240536
-
-
(unpublished).
-
P. Fazzini, C. Bonafos, A. Claverie, A. Hubert, T. Ernst, and M. Respaud (unpublished).
-
-
-
Fazzini, P.1
Bonafos, C.2
Claverie, A.3
Hubert, A.4
Ernst, T.5
Respaud, M.6
-
16
-
-
70449747826
-
-
NNOTER 0957-4484 10.1088/0957-4484/20/47/475307
-
F. Oehler, P. Gentile, T. Baron, and P. Ferret, Nanotechnology NNOTER 0957-4484 10.1088/0957-4484/20/47/475307 20, 475307 (2009).
-
(2009)
Nanotechnology
, vol.20
, pp. 475307
-
-
Oehler, F.1
Gentile, P.2
Baron, T.3
Ferret, P.4
-
17
-
-
77955314820
-
-
NALEFD 1530-6984 10.1021/nl904081g
-
F. Oehler, P. Gentile, T. Baron, P. Ferret, M. Den Hertog, and J. Rouviére, Nano Lett. NALEFD 1530-6984 10.1021/nl904081g 10, 2335 (2010).
-
(2010)
Nano Lett.
, vol.10
, pp. 2335
-
-
Oehler, F.1
Gentile, P.2
Baron, T.3
Ferret, P.4
Den Hertog, M.5
Rouviére, J.6
-
18
-
-
11644315079
-
-
PRLTAO 0031-9007 10.1103/PhysRevLett.17.860
-
J. R. Haynes, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.17. 860 17, 860 (1966).
-
(1966)
Phys. Rev. Lett.
, vol.17
, pp. 860
-
-
Haynes, J.R.1
-
19
-
-
3242669787
-
-
in Nauka, Leningrad
-
L. Keldysh, in Proceedings of the 9th International Conference on the Physics of Semiconductors, Moscow, 1968 (Nauka, Leningrad, 1968), p. 1307.
-
(1968)
Proceedings of the 9th International Conference on the Physics of Semiconductors, Moscow, 1968
, pp. 1307
-
-
Keldysh, L.1
-
20
-
-
3242681811
-
-
PRLTAO 0031-9007 10.1103/PhysRevLett.92.236802
-
N. Pauc, V. Calvo, J. Eymery, F. Fournel, and N. Magnea, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.92.236802 92, 236802 (2004).
-
(2004)
Phys. Rev. Lett.
, vol.92
, pp. 236802
-
-
Pauc, N.1
Calvo, V.2
Eymery, J.3
Fournel, F.4
Magnea, N.5
-
21
-
-
29744463490
-
Electronic and optical properties of Si SiO2 nanostructures. I. Electron-hole collective processes in single Si SiO2 quantum wells
-
DOI 10.1103/PhysRevB.72.205324, 205324
-
N. Pauc, V. Calvo, J. Eymery, F. Fournel, and N. Magnea, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.72.205324 72, 205324 (2005). (Pubitemid 43029358)
-
(2005)
Physical Review B - Condensed Matter and Materials Physics
, vol.72
, Issue.20
, pp. 1-13
-
-
Pauc, N.1
Calvo, V.2
Eymery, J.3
Fournel, F.4
Magnea, N.5
-
22
-
-
29844453104
-
Electronic and optical properties of Si SiO2 nanostructures. II. Electron-hole recombination at the Si SiO2 quantum-well-quantum-dot transition
-
DOI 10.1103/PhysRevB.72.205325, 205325
-
N. Pauc, V. Calvo, J. Eymery, F. Fournel, and N. Magnea, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.72.205325 72, 205325 (2005). (Pubitemid 43033227)
-
(2005)
Physical Review B - Condensed Matter and Materials Physics
, vol.72
, Issue.20
, pp. 1-8
-
-
Pauc, N.1
Calvo, V.2
Eymery, J.3
Fournel, F.4
Magnea, N.5
-
23
-
-
0003484263
-
-
Academic Press, New York
-
T. M. Rice, J. C. Hensel, T. G. Philips, and G. A. Thomas, Solid State Physics (Academic Press, New York, 1977), Vol. 32.
-
(1977)
Solid State Physics
, vol.32
-
-
Rice, T.M.1
Hensel, J.C.2
Philips, T.G.3
Thomas, G.A.4
-
24
-
-
70450060054
-
-
P. F. Fazzini, C. Bonafos, A. Hubert, J. P. Colonna, T. Ernst, M. Respaud, and F. Gloux, Mater. Res. Soc. Symp. Proc. 1144, 7 (2009).
-
(2009)
Mater. Res. Soc. Symp. Proc.
, vol.1144
, pp. 7
-
-
Fazzini, P.F.1
Bonafos, C.2
Hubert, A.3
Colonna, J.P.4
Ernst, T.5
Respaud, M.6
Gloux, F.7
-
25
-
-
1642621158
-
-
JAPIAU 0021-8979 10.1063/1.1713945
-
B. E. Deal and A. S. Grove, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1713945 36, 3770 (1965).
-
(1965)
J. Appl. Phys.
, vol.36
, pp. 3770
-
-
Deal, B.E.1
Grove, A.S.2
-
26
-
-
33645940928
-
Electronic structure of semiconductor nanowires
-
DOI 10.1103/PhysRevB.73.165319, 165319
-
Y. M. Niquet, A. Lherbier, N. H. Quang, M. V. Fernandez-Serra, X. Blase, and C. Delerue, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.73.165319 73, 165319 (2006). (Pubitemid 43583844)
-
(2006)
Physical Review B - Condensed Matter and Materials Physics
, vol.73
, Issue.16
, pp. 1-13
-
-
Niquet, Y.M.1
Lherbier, A.2
Quang, N.H.3
Fernandez-Serra, M.V.4
Blase, X.5
Delerue, C.6
|