Photoluminescence of confined electron-hole plasma in core-shell silicon/silicon oxide nanowires

Applied Physics Letters

Volumn 93, Issue 21, 2008, Pages

  Demichel, O ^a   Oehler, F ^a   No P ^a   Calvo, V ^a   Pauc, N ^a   Gentile, P ^a   Baron, T ^b   Peyrade, D ^b   Magnea, N ^a  

^a CEA GRENOBLE   (France)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRONIC STATES; ENERGY GAP; HETEROJUNCTIONS; NANOWIRES; PHOTOLUMINESCENCE; TEMPERATURE; THERMOOXIDATION;

ELECTRON HOLE PLASMA; EXCHANGE AND CORRELATION; INSULATOR STRUCTURE; LOW TEMPERATURE PHOTOLUMINESCENCE; RADIATIVE RECOMBINATION; RECOMBINATION ENERGY; SPATIAL CONFINEMENT; THERMAL OXIDATION;

SILICON COMPOUNDS;

EID: 57049147972     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3021359     Document Type: Article

References (25)

1. R. S. Wagner and W. C. Ellis, Appl. Phys. Lett. 0003-6951 10.1063/1.1753975 4, 89 (1964); R. S. Wagner, W. C. Ellis, S. M. Arnold, and K. A. Jackson, J. Appl. Phys. 0021-8979 10.1063/1.1713143 35, 2993 (1964).
2. J. -Y. Yu, S. -W. Chung, and J. R. Heath, J. Phys. Chem. B 1089-5647 10.1021/jp002595q 104, 11864 (2000).
3. A. M. Morales and C. M. Lieber, Science 0036-8075 10.1126/science.279. 5348.208 279, 208 (1998).
4. X. Duan and C. M. Lieber, Adv. Mater. (Weinheim, Ger.) 0935-9648 10.1002/(SICI)1521-4095(200002)12:4<298::AID-ADMA298>3.0.CO;2-Y 12, 298 (2000).
5. J. Arbiol, B. Kalache, P. Roca i Cabarrocas, J. R. Morante, and A. Fontcuberta i Morral, Nanotechnology 0957-4484 10.1088/0957-4484/18/30/305606 18, 305606 (2007).
6. D. P. Yu, Q. L. Hang, Y. Ding, H. Z. Zhang, Z. G. Bai, J. J. Wang, Y. H. Zou, W. Qian, G. C. Xiong, and S. Q. Feng, Appl. Phys. Lett. 0003-6951 10.1063/1.122677 73, 3076 (1998).
7. Z. G. Bai, D. P. Yu, J. J. Wang, Y. H. Zou, W. Qian, J. S. Fu, S. Q. Feng, J. Xu, and L. P. You, Mater. Sci. Eng., B 0921-5107 10.1016/S0921-5107(99) 00501-2 72, 117 (2000).
8. G. Jia, T. Arguirov, M. Kittler, Z. Su, D. Yang, and J. Sha, Semiconductors 1063-7826 10.1134/S1063782607040057 41, 391 (2007).
9. Y. Cui, X. Duan, J. Hu, and C. M. Lieber, J. Phys. Chem. B 1089-5647 10.1021/jp0009305 104, 5213 (2000).
10. V. Schmidt, H. Riel, S. Senz, S. Karg, W. Riess, and U. Gösele, Small 1613-6810 10.1002/smll.200500181 2, 85 (2006).
11. G. M. Cohen, M. J. Rooks, J. O. Chu, S. E. Laux, P. M. Solomon, J. A. Ott, R. J. Miller, and W. Haensch, Appl. Phys. Lett. 0003-6951 10.1063/1.2746946 90, 233110 (2007).
12. J. Weber, H. Bauch, and R. Sauer, Phys. Rev. B 0163-1829 10.1103/PhysRevB.25.7688 25, 7688 (1982).
13. L. Keldysh, in Proceedings of the Ninth International Conference on the Physics of Semiconductors, Moscow (Nauka, Leningrad, 1968), p. 1307.
14. T. M. Rice, J. C. Hensel, T. G. Phillips, and G. A. Thomas, Solid States of Physics (Academic, New York, 1977), Vol. 32.
15. M. Tajima and S. Ibuka, J. Appl. Phys. 0021-8979 10.1063/1.368287 84, 2224 (1998).
16. N. Pauc, V. Calvo, J. Eymery, F. Fournel, and N. Magnea, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.92.236802 92, 236802 (2004).
17. N. Pauc, V. Calvo, J. Eymery, F. Fournel, and N. Magnea, Phys. Rev. B 0163-1829 10.1103/PhysRevB.72.205324 72, 205324 (2005).
18. P. Vashishta and R. K. Kalia, Phys. Rev. B 0163-1829 10.1103/PhysRevB.25. 6492 25, 6492 (1982).
19. K. W. Adu, H. R. Gutírrez, U. J. Kim, and P. C. Eklund, Phys. Rev. B 0163-1829 10.1103/PhysRevB.73.155333 73, 155333 (2006).
20. M. Combescot and P. Nozieres, J. Phys. C 0022-3719 10.1088/0022-3719/5/ 17/014 5, 2369 (1972).
21. L. M. Smith and J. P. Wolfe, Phys. Rev. B 0163-1829 10.1103/PhysRevB.51. 7521 51, 7521 (1995).
22. M. Combescot, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.32.15 32, 15 (1974).
23. C. Kittel, Physique de l'́tat Solide (Dunod, Paris, 1998).
24. H. Lemke in Semiconductor Silicon, edited by, H. R. Huff, W. Bergholz, and, K. Sumino, (The Electrochemical Society, New Jersey, 1994), p. 695.
25. H. Lemke, Phys. Status Solidi A 665, 193 (1986). 0031-8965