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Journal of Applied Physics

Volumn 106, Issue 2, 2009, Pages

Photoluminescence properties of size-controlled silicon nanocrystals at low temperatures

(3) Rinnert, H a Jambois, O a,b Vergnat, M a

a INSTITUT JEAN LAMOUR (France)

b UNIVERSITY OF BARCELONA (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

BULK SEMICONDUCTORS; EXCITATION POWER; LOW TEMPERATURES; MULTILAYER STRUCTURES; NARROW SIZE DISTRIBUTIONS; PHOTOLUMINESCENCE PROPERTIES; PHOTOLUMINESCENCE SPECTRUM; PL INTENSITY; POWER DEPENDENCE; QUANTUM CONFINEMENT ENERGY; RADIATIVE RATES; SATURATION EFFECTS; SILICON NANOCRYSTALS; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT;

LAWS AND LEGISLATION; NANOCLUSTERS; NANOCRYSTALS; PHOTOLUMINESCENCE; SILICON COMPOUNDS; SILICON OXIDES; SIZE DISTRIBUTION; TEMPERATURE DISTRIBUTION;

SILICON;

EID: 68249144495 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3169513 Document Type: Article

Times cited : (59)

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