Coexistence of 1D and quasi-0D photoluminescence from single silicon nanowires

Nano Letters

Volumn 11, Issue 7, 2011, Pages 3003-3009

  Valenta, Jan ^a   Bruhn, Benjamin ^b   Linnros, Jan ^b  

^a CHARLES UNIVERSITY   (Czech Republic)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

exciton; luminescence; Nanowire; quantum dot; silicon

Indexed keywords

BROAD EMISSION BANDS; ELECTRON HOLE PAIRS; EMISSION FEATURES; GAUSSIAN SIZE DISTRIBUTION; HIGH ENERGY; IMAGING OPTICAL SPECTROSCOPY; LASER PUMPING; PEAK POSITION; PL EMISSION; SCANNING ELECTRON MICROSCOPY IMAGE; SILICON NANOWIRES; SPECTRAL IMAGES; SURFACE PROTRUSION; VARIABLE TEMPERATURE;

ELECTRON BEAM PUMPING; EXCITED STATES; EXCITONS; NANOWIRES; PHOTOLUMINESCENCE; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR QUANTUM DOTS;

SILICON;

NANOWIRE; QUANTUM DOT; SILICON;

ARTICLE; CHEMISTRY; LASER; LUMINESCENCE; NANOTECHNOLOGY; PARTICLE SIZE; PHOTOCHEMISTRY; SURFACE PROPERTY; TEMPERATURE;

LASERS; LUMINESCENCE; NANOTECHNOLOGY; NANOWIRES; PARTICLE SIZE; PHOTOCHEMISTRY; QUANTUM DOTS; SILICON; SURFACE PROPERTIES; TEMPERATURE;

EID: 79960239636     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl201610g     Document Type: Article

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