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Applied Physics Letters

Volumn 96, Issue 19, 2010, Pages

Defect reduction in silicon nanoparticles by low-temperature vacuum annealing

(7) Niesar, S a Stegner, A R a Pereira, R N b Hoeb, M a Wiggers, H c Brandt, M S a Stutzmann, M a

a WALTER SCHOTTKY INSTITUT (Germany)

b UNIVERSITY OF AVEIRO (Portugal)

c UNIVERSITY OF DUISBURG ESSEN (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT REDUCTION; ELECTRON PARAMAGNETIC RESONANCE; ETCHING STEP; HF ETCHING; LOW TEMPERATURES; PHOTOTHERMAL DEFLECTION SPECTROSCOPY; SILICON DANGLING BOND; SILICON NANOPARTICLES; VACUUM-ANNEALING;

ANNEALING; DEFECT DENSITY; DEFECTS; ETCHING; HYDROFLUORIC ACID; NANOPARTICLES; PARAMAGNETIC RESONANCE; SILICON COMPOUNDS; SILICON OXIDES; VACUUM;

SILICON;

EID: 77952971786 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3428359 Document Type: Article

Times cited : (34)

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