SCOPUS 정보 검색 플랫폼

Volumn 103, Issue 24, 2013, Pages

Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells

(11) Farrell, R M a Al Heji, A A a Neufeld, C J a Chen, X a Iza, M a Cruz, S C a Keller, S a Nakamura, S a DenBaars, S P a Mishra, U K a Speck, J S a

a University of California (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EXTRACTION EFFICIENCIES; FACETED SURFACES; HIGH RATE; INGAN/GAN; LOW TEMPERATURES; SURFACE-ROUGHENING; V-DEFECTS;

GALLIUM NITRIDE; LIGHT EMITTING DIODES; SOLAR CELLS; SURFACE ROUGHNESS;

SURFACE DEFECTS;

EID: 84890488053 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4844955 Document Type: Article

Times cited : (12)

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