SCOPUS 정보 검색 플랫폼

Superlattices and Microstructures

Volumn 52, Issue 2, 2012, Pages 299-305

Improved efficiency of InGaN/GaN-based multiple quantum well solar cells by reducing contact resistance

(6) Song, Jun Hyuk a Oh, Joon Ho a Shim, Jae Phil b Min, Jung Hong b Lee, Dong Seon b Seong, Tae Yeon a

a Korea University (South Korea)

b Gwangju Institute of Science and Technology (GIST) (South Korea)

Author keywords

Cu doped indium oxide; InGaN; Ohmic contact; Solar cell

Indexed keywords

CU-DOPED; ELECTRICAL AND OPTICAL PROPERTIES; EXTERNAL QUANTUM EFFICIENCY; FILL FACTOR; INDIUM OXIDE; INDIUM TIN OXIDE; INGAN; INGAN/GAN; INTERLAYER THICKNESS; PEAK WAVELENGTH;

CONVERSION EFFICIENCY; COPPER; ELECTRIC PROPERTIES; GALLIUM NITRIDE; INDIUM; INDIUM COMPOUNDS; OHMIC CONTACTS; OPTICAL PROPERTIES; SOLAR CELLS; TIN; TIN OXIDES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84861834558 PISSN: 07496036 EISSN: 10963677 Source Type: Journal
DOI: 10.1016/j.spmi.2012.05.002 Document Type: Article

Times cited : (11)

References (18)

1
- 12444250972
- Cambridge University Press Cambridge
- E. Fred Schubert 2nd Light-Emitting Diodes 2006 Cambridge University Press Cambridge
- (2006) 2nd Light-Emitting Diodes
- Fred Schubert, E.¹

2
- 0000223380
- M.K. Kelly, O. Ambacher, B. Dahlheimer, G. Groos, R. Dimitrov, H. Angerer, and M. Stutzmann Appl. Phys. Lett. 69 1996 1749
- (1996) Appl. Phys. Lett. , vol.69 , pp. 1749
- Kelly, M.K.¹ Ambacher, O.² Dahlheimer, B.³ Groos, G.⁴ Dimitrov, R.⁵ Angerer, H.⁶ Stutzmann, M.⁷

3
- 34848905285
- O. Jani, I. Ferguson, C. Honsberg, and S. Kurtz Appl. Phys. Lett. 91 2007 132117
- (2007) Appl. Phys. Lett. , vol.91 , pp. 132117
- Jani, O.¹ Ferguson, I.² Honsberg, C.³ Kurtz, S.⁴

4
- 53749099094
- C.J. Neufeld, N.G. Toledo, S.C. Cruz, M. Iza, S.P. DenBaars, and U.K. Mishra Appl. Phys. Lett. 93 2008 143502
- (2008) Appl. Phys. Lett. , vol.93 , pp. 143502
- Neufeld, C.J.¹ Toledo, N.G.² Cruz, S.C.³ Iza, M.⁴ Denbaars, S.P.⁵ Mishra, U.K.⁶

5
- 67650711664
- J.Q. Wu J. Appl. Phys. 106 2009 011101
- (2009) J. Appl. Phys. , vol.106 , pp. 011101
- Wu, J.Q.¹

6
- 0345330006
- J. Wu, W. Walukiewicz, K.M. Yu, M. Shan, J.W. Ager, E.E. Haller, H. Lu, W.J. Schaff, W.K. Metzger, and S. Kurtz J. Appl. Phys. 94 2003 6477 6482
- (2003) J. Appl. Phys. , vol.94 , pp. 6477-6482
- Wu, J.¹ Walukiewicz, W.² Yu, K.M.³ Shan, M.⁴ Ager, J.W.⁵ Haller, E.E.⁶ Lu, H.⁷ Schaff, W.J.⁸ Metzger, W.K.⁹ Kurtz, S.¹⁰

7
- 0031551651
- J.F. Muth, J.H. Lee, I.K. Shmagin, R.M. Kolbas, H.C. Casey, B.P. Keller, U.K. Mishra, and S.P. DenBaars Appl. Phys. Lett. 71 1997 2572 2574
- (1997) Appl. Phys. Lett. , vol.71 , pp. 2572-2574
- Muth, J.F.¹ Lee, J.H.² Shmagin, I.K.³ Kolbas, R.M.⁴ Casey, H.C.⁵ Keller, B.P.⁶ Mishra, U.K.⁷ Denbaars, S.P.⁸

8
- 0000537364
- J.K. Ho, C.S. Jong, C.C. Chiu, C.N. Huang, C.Y. Chen, and K.K. Shih Appl. Phys. Lett. 74 1999 1275 1277
- (1999) Appl. Phys. Lett. , vol.74 , pp. 1275-1277
- Ho, J.K.¹ Jong, C.S.² Chiu, C.C.³ Huang, C.N.⁴ Chen, C.Y.⁵ Shih, K.K.⁶

9
- 24144440966
- K.M. Chang, J.Y. Chu, and C.C. Cheng Solid-state Electron 49 2005 1381 1386
- (2005) Solid-state Electron , vol.49 , pp. 1381-1386
- Chang, K.M.¹ Chu, J.Y.² Cheng, C.C.³

10
- 0344445588
- C.H. Kuo, S.J. Chang, Y. Su, R.W. Chuang, C.S. Chang, L.W. Wu, W.C. Lai, J.F. Chen, J. Sheu, H.M. Lo, and J.M. Tsai Mater. Sci. Eng. B-Solid State Mater. Adv. Technol. 106 2004 69 72
- (2004) Mater. Sci. Eng. B-Solid State Mater. Adv. Technol. , vol.106 , pp. 69-72
- Kuo, C.H.¹ Chang, S.J.² Su, Y.³ Chuang, R.W.⁴ Chang, C.S.⁵ Wu, L.W.⁶ Lai, W.C.⁷ Chen, J.F.⁸ Sheu, J.⁹ Lo, H.M.¹⁰ Tsai, J.M.¹¹

11
- 10044287856
- R.B.H. Tahar, T. Ban, Y. Ohya, and Y. Takahashi J. Appl. Phys. 83 1998 2631 2645
- (1998) J. Appl. Phys. , vol.83 , pp. 2631-2645
- Tahar, R.B.H.¹ Ban, T.² Ohya, Y.³ Takahashi, Y.⁴

12
- 77957585302
- J.P. Shim, S.R. Jeon, Y.K. Jeong, and D.S. Lee IEEE Electron Device Lett. 31 2010 1140 1142
- (2010) IEEE Electron Device Lett. , vol.31 , pp. 1140-1142
- Shim, J.P.¹ Jeon, S.R.² Jeong, Y.K.³ Lee, D.S.⁴

13
- 73349100644
- J.O. Song, J.S. Ha, and T.Y. Seong IEEE Trans. Electron Devices 57 2010 42 59
- (2010) IEEE Trans. Electron Devices , vol.57 , pp. 42-59
- Song, J.O.¹ Ha, J.S.² Seong, T.Y.³

14
- 0027870852
- H. Tsumomura, and H. Kobayashi Crit. Rev. Solid State Mater. Sci. 18 1993 261 326
- (1993) Crit. Rev. Solid State Mater. Sci. , vol.18 , pp. 261-326
- Tsumomura, H.¹ Kobayashi, H.²

15
- 0029727123
- Gallium Nitride and Realated Materials
- R.D. Dupuis, J.A. Edmond, F.A. Ponce, S. Nakamura (Eds.) Pittsburgh, PA
- R.J. Nemanich, M.C. Benjamin, S.W. King, M.D. Bresmer, R.F. Davis, B. Chen, Z. Zhang, J. Bernhole, Gallium Nitride and Realated Materials, in: R.D. Dupuis, J.A. Edmond, F.A. Ponce, S. Nakamura (Eds.), Mater. Res. Soc. Symp. Proc. 395, Pittsburgh, PA, 1996.
- (1996) Mater. Res. Soc. Symp. Proc. , vol.395
- Nemanich, R.J.¹ Benjamin, M.C.² King, S.W.³ Bresmer, M.D.⁴ Davis, R.F.⁵ Chen, B.⁶ Zhang, Z.⁷ Bernhole, J.⁸

16
- 20844439685
- J.O. Song, J.S. Kwak, Y. Park, and T.Y. Seong Appl. Phys. Lett. 86 2005 213505
- (2005) Appl. Phys. Lett. , vol.86 , pp. 213505
- Song, J.O.¹ Kwak, J.S.² Park, Y.³ Seong, T.Y.⁴

17
- 3342986527
- R.T. Tung Phys. Rev. B 45 1992 13509 13523
- (1992) Phys. Rev. B , vol.45 , pp. 13509-13523
- Tung, R.T.¹

18
- 77953014801
- L. Fang, S.J. Baik, K.S. Lim, S.H. Yoo, M.S. Seo, S.J. Kang, and J.W. Seo Appl. Phys. Lett. 96 2010 193501
- (2010) Appl. Phys. Lett. , vol.96 , pp. 193501
- Fang, L.¹ Baik, S.J.² Lim, K.S.³ Yoo, S.H.⁴ Seo, M.S.⁵ Kang, S.J.⁶ Seo, J.W.⁷

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