InGaN light emitting solar cells with a roughened N-face GaN surface through a laser decomposition process

Optics Express

Volumn 18, Issue 22, 2010, Pages 23406-23412

  Chen, Kuei Ting ^a   Huang, Wan Chun ^a   Hsieh, Tsung Han ^a   Hsieh, Chang Hua ^a   Lin, Chia Feng ^a  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; LIGHT EMISSION; SOLAR CELLS;

ACTIVE LAYER; AREA RATIOS; CUTOFF WAVELENGTHS; ETCHING PROCESS; GAN/SAPPHIRE; LASER DECOMPOSITION; LIGHT OUTPUT POWER; OPERATING CURRENTS; PHOTO-VOLTAIC EFFICIENCY; PYRAMIDAL STRUCTURES; RED-SHIFT PHENOMENA; TRANSMITTANCE SPECTRA;

LIGHT ABSORPTION;

EID: 78149391875     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.18.023406     Document Type: Article

References (17)

1. C. T. Lee, U. Z. Yang, C. S. Lee, and P. S. Chen, "White light emission of monolithic carbon-implanted InGaN-GaN light-emitting diodes," IEEE Photon. Technol. Lett. 18(19), 2029-2031 (2006).
2. J. H. Cheng, Y. S. Wu, W. C. Liao, and B. W. Lin, "Improved crystal quality and performance of GaN-based light-emitting diodes by decreasing the slanted angle of patterned sapphire," Appl. Phys. Lett. 96(5), 051109 (2010).
3. C. C. Kao, Y. K. Su, C. L. Lin, and J. J. Chen, "The aspect ratio effects on the performances of GaN-based light-emitting diodes with nanopatterned sapphire substrates," Appl. Phys. Lett. 97(2), 023111 (2010).
4. S. J. Chang, L. W. Wu, Y. K. Su, Y. P. Hsu, W. C. Lai, J. M. Tsai, J. K. Sheu, and C. T. Lee, "Nitride-based LEDs with 800°C grown p-AlInGaN-GaN double-cap layers," IEEE Photon. Technol. Lett. 16(6), 1447-1449 (2004).
5. H. G. Kim, H. K. Kim, H. Y. Kim, J. H. Ryu, J. H. Kang, N. Han, P. Uthirakumar, and C.-H. Hong, "Impact of two-floor air prism arrays as an embedded reflector for enhancing the output power of InGaN/GaN light emitting diodes," Appl. Phys. Lett. 95(22), 221110 (2009).
6. M. H. Lo, P. M. Tu, C. H. Wang, C. W. Hung, S. C. Hsu, Y. J. Cheng, H. C. Kuo, H. W. Zan, S. C. Wang, C. Y. Chang, and S. C. Huang, "High efficiency light emitting diode with anisotropically etched GaN-sapphire interface," Appl. Phys. Lett. 95(4), 041109 (2009).
7. T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, "Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening," Appl. Phys. Lett. 84(6), 855-857 (2004).
8. D. A. Stocker, E. F. Schubert, and J. M. Redwing, "Crystallographic wet chemical etching of GaN," Appl. Phys. Lett. 73(18), 2654-2656 (1998).
9. C. J. Neufeld, N. G. Toledo, S. C. Cruz, M. Iza, S. P. DenBaars, and U. K. Mishra, "High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap," Appl. Phys. Lett. 93(14), 143502 (2008).
10. R. Dahal, B. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, "InGaN/GaN multiple quantum well solar cells with long operating wavelengths," Appl. Phys. Lett. 94(6), 063505 (2009).
11. K. Y. Lai, G. J. Lin, Y.-L. Lai, Y. F. Chen, and J. H. He, "Effect of indium fluctuation on the photovoltaic characteristics of InGaN/GaN multiple quantum well solar cells," Appl. Phys. Lett. 96(8), 081103 (2010).
12. I. M. Pryce, D. D. Koleske, A. J. Fischer, and H. A. Atwater, "Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells," Appl. Phys. Lett. 96(15), 153501 (2010).
13. R. H. Horng, S. T. Lin, Y. L. Tsai, M. T. Chu, W. Y. Liao, M. H. Wu, R. M. Lin, and Y. C. Lu, "Improved conversion efficiency of GaN/InGaN thin-film solar cells," IEEE Electron Device Lett. 30(7), 724-726 (2009).
14. Y. Jung, K. H. Baik, F. Ren, S. J. Pearton, and J. Kim, "Effects of Photoelectrochemical Etching of N-polar and Ga-polar gallium nitride on sapphire substrates," J. Electrochem. Soc. 157(6), H676- H678 (2010).
15. C. F. Lin, C. M. Lin, K. T. Chen, W. C. Huang, M. S. Lin, J. J. Dai, R. H. Jiang, Y. C. Huang, and C. Y. Chang, "Blue light-emitting diodes with a roughened backside fabricated by wet etching," Appl. Phys. Lett. 95(20), 201102 (2009).
16. H. M. Ng, N. G. Weimann, and A. Chowdhury, "GaN nanotip pyramids formed by anisotropic etching," J. Appl. Phys. 94(1), 650-653 (2003).
17. M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, "Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop," Appl. Phys. Lett. 93(4), 041102 (2008).