Discussion on electrical characteristics of i-In0.13Ga0.87N p-i-n photovoltaics by using a single/multi-antireflection layer

Solar Energy Materials and Solar Cells

Volumn 94, Issue 7, 2010, Pages 1259-1262

  Cheng Lee, Han ^a   Kuin Su, Yan ^a,d   Chuang, Wen kuei ^a   Ching Lin, Jia ^b   Chin Huang, Kuo ^c   Cheng Cheng, Yi ^a   Jen Chang, Kuo ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d KUN SHAN UNIVERSITY   (Taiwan)

Author keywords

Antireflection layer; InGaN; p i n photovoltaics

Indexed keywords

ACTIVE LAYER; ANTIREFLECTION LAYERS; AT-WAVELENGTH; ELECTRICAL CHARACTERISTIC; FILL FACTOR; PHOTOVOLTAICS; RECOMBINATION CURRENTS; REFLECTANCE SIMULATION; SERIES RESISTANCES; SHUNT RESISTANCES; SURFACE REFLECTANCE;

GALLIUM; OPEN CIRCUIT VOLTAGE; PHOTOVOLTAIC EFFECTS; REFLECTION; SILICON COMPOUNDS; TANTALUM;

FERTILIZERS;

EID: 77953319458     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2010.03.020     Document Type: Article

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