Improved efficiency by using transparent contact layers in InGaN-based p-i-n solar cells

IEEE Electron Device Letters

Volumn 31, Issue 10, 2010, Pages 1140-1142

  Shim, Jae Phil ^a   Jeon, Seong Ran ^b   Jeong, Yon Kil ^a   Lee, Dong Seon ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Korea Photonics Technology Institute (KOPTI)   (South Korea)

Author keywords

Efficiency; Indium Gallium Nitride (InGaN) solar cell; spreading layer

Indexed keywords

CONTACT LAYERS; CURRENT SPREADING; EXTERNAL QUANTUM EFFICIENCY; FILL FACTOR; I - V CURVE; INDIUM GALLIUM NITRIDE; INGAN/GAN; IV CHARACTERISTICS; SOLAR CELL PARAMETERS; SPREADING LAYER;

CONVERSION EFFICIENCY; GALLIUM ALLOYS; GALLIUM NITRIDE; INDIUM; OPEN CIRCUIT VOLTAGE; X RAY DIFFRACTION;

SOLAR CELLS;

EID: 77957585302     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2058087     Document Type: Article

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