Growth and characterization of p-InGaN/i-InGaN/n-GaN double-heterojunction solar cells on patterned sapphire substrates

IEEE Electron Device Letters

Volumn 32, Issue 7, 2011, Pages 922-924

  Chu, Mu Tao ^a   Liao, Wen Yih ^b   Horng, Ray Hua ^a,c   Tsai, Tsung Yen ^a   Wu, Tsai Bau ^b   Liu, Shu Ping ^a   Wu, Ming Hsien ^c   Lin, Ray Ming ^d  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^d CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

Edge dislocation density; InGaN solar cell; light absorption; patterned sapphire

Indexed keywords

DOUBLE-HETEROJUNCTION; EDGE-DISLOCATION DENSITY; INCIDENT LIGHT; INGAN SOLAR CELL; P-INGAN; PATTERNED SAPPHIRE; PATTERNED SAPPHIRE SUBSTRATE; SAPPHIRE SUBSTRATES;

ABSORPTION; CELL GROWTH; EDGE DISLOCATIONS; EPITAXIAL GROWTH; GALLIUM NITRIDE; HETEROJUNCTIONS; LIGHT ABSORPTION; OPEN CIRCUIT VOLTAGE; SAPPHIRE;

SUBSTRATES;

EID: 79959802447     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2144954     Document Type: Article

References (11)

1. R. H. Horng, Y. A. Lu, and D. S. Wuu, "Light extraction investigation for thin-film GaN light-emitting diodes with imbedded electrode," IEEE Photon. Technol. Lett., vol. 23, no. 1, pp. 54-56, Jan. 2011.
2. M. Hansen, J. Piprek, P. M. Pattison, J. S. Spech, S. Nakamura, and S. P. Den Baars, "Higher efficiency InGaN laser diodes with an improved quantum well capping configuration," Appl. Phys. Lett., vol. 81, no. 22, pp. 4275-4277, Nov. 2002.
3. R. H. Horng, M. T. Chu, H. R. Chen, W. Y. Liao, M. H. Wu, K. F. Chen, and D. S. Wuu, "Improved conversion efficiency of textured InGaN so-lar cells with interdigitated imbedded electrodes," IEEE Electron Device Lett., vol. 31, no. 6, pp. 585-587, Jun. 2010.
4. R. Dahal, B. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, "InGaN/GaN multiple quantum well solar cells with long operating wavelengths," Appl. Phys. Lett., vol. 94, no. 6, p. 063 505, Feb. 2009.
5. J. Elsner, R. Jones, P. K. Sitch, V. D. Porezag, M. Elstner, T. Frauenheim, M. I. Heggie, S. Öberg, and P. R. Briddon, "Theory ofthreading edge and screw dislocations in GaN," Phys. Rev. Lett., vol. 79, no. 19, pp. 3672-3675, Nov. 1997. (Pubitemid 127654503)
6. D. Holec, P. M. F. J. Costa, M. J. Kappers, and C. J. Humphreys, "Critical thickness calculations for InGaN/GaN," J. Crystal Growth, vol. 303, no. 1, pp. 314-317, Jan. 2007. (Pubitemid 46550497)
7. Y. Kuwahara, T. Fujii, T. Sugiyama, D. Iida, Y. Isobe, Y. Fujiyama, Y. Morita, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano, "GaInN-based solar cells using strained-layer GaInN/GaInN superlattice active layer on a freestanding GaN substrate," Appl. Phys. Exp., vol. 4, no. 2, p. 021001, Jan. 2011.
8. K. Iida, T. Kawashima, A. Miyazaki, H. Kasugai, S. Mishima, A. Honshio, Y. Miyake, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki, "Laser diode of 350.9 nm wavelength grown on sapphire substrate by MOVPE," J. Cryst. Growth, vol. 272, no. 1-4, pp. 270-273, Dec. 2004.
9. D. S. Wuu, W. K. Wang, K. S. Wen, S. C. Huang, S. H. Lin, S. Y. Huang, C. F Lin, and R. H. Horng, "Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template," Appl. Phys. Lett., vol. 89, no. 16, p. 161 105, Oct. 2006.
10. D. S. Wuu, H. Y. Wu, S. T. Chen, T. Y. Tsai, X. Zheng, and R. H. Horng, "Defect reduction of laterally regrown GaN on GaN/patterned sapphire substrates," J. Cryst. Growth, vol. 311, no. 10, pp. 3063-3066, May 2009.
11. X. Zheng, R. H. Horng, D. S. Wuu, M. T. Chu, W. Y. Liao, M. H. Wu, R. M. Lin, and Y. C. Lu, "High-quality InGaN/GaN heterojunctions and their photovoltaic effects," Appl. Phys. Lett., vol. 93, no. 26, p. 261 108, Dec. 2008.