Efficiency enhancement of InGaN-based multiple quantum well solar cells employing antireflective ZnO nanorod arrays

IEEE Electron Device Letters

Volumn 32, Issue 8, 2011, Pages 1104-1106

  Lin, G J ^a   Lai, K Y ^a   Lin, C A ^a   Lai, Y L ^b   He, J H ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b GENESIS PHOTONICS INC   (Taiwan)

Author keywords

Antireflection (AR); conversion efficiency; InGaN; multiple quantum well (MQW); solar cells; ZnO nanorod arrays (NRAs)

Indexed keywords

ANTIREFLECTION; ANTIREFLECTIVE; CHEMICAL METHOD; EFFICIENCY ENHANCEMENT; INGAN; PHOTOVOLTAIC CHARACTERISTICS; PHOTOVOLTAICS; SURFACE REFLECTIONS; ZNO NANOROD ARRAYS;

ABSORPTION; CONVERSION EFFICIENCY; EFFICIENCY; GALLIUM COMPOUNDS; NANORODS; PHOTOVOLTAIC EFFECTS; ZINC OXIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79960918609     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2158061     Document Type: Article

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