Increasing solar efficiency of InGaN/GaN multiple quantum well solar cells with a reflective aluminum layer or a flip-chip structure

Journal of the Electrochemical Society

Volumn 159, Issue 5, 2012, Pages

  Jeng, Ming Jer ^a   Lee, Yu Lin ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CASCADE SYSTEMS; EFFICIENCY ENHANCEMENT; FLIP CHIP; INDIUM CONTENT; INGAN/GAN; QUANTUM WELL LAYERS; RECOMBINATION CENTERS; REFLECTIVE LAYERS; TOP CONTACT;

ALUMINUM; EFFICIENCY; FLIP CHIP DEVICES; GALLIUM; INDIUM;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84859336896     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/2.009206jes     Document Type: Article

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