Design of integrated III-nitride/non-III-nitride tandem photovoltaic devices

Journal of Applied Physics

Volumn 111, Issue 5, 2012, Pages

  Toledo, Nikholas G ^a   Friedman, Daniel J ^b   Farrell, Robert M ^a   Perl, Emmett E ^a   Lin, Chieh Ting ^a   Bowers, John E ^a   Speck, James S ^a   Mishra, Umesh K ^a  

^a University of California   (United States)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION EDGES; CELL EFFICIENCY; EXCESS CURRENT; EXTERNAL QUANTUM EFFICIENCY; HIGH ENERGY PHOTONS; III-NITRIDE; LAYER THICKNESS; LIMITING CURRENT; PHOTOVOLTAIC DEVICES; POWER CONVERSION EFFICIENCIES; SPECTRAL FILTERING; TANDEM SOLAR CELLS; TOTAL EFFICIENCY;

CADMIUM SULFIDE SOLAR CELLS; CONVERSION EFFICIENCY; DESIGN; EFFICIENCY; GALLIUM COMPOUNDS; INTEGRATION; NANOSTRUCTURED MATERIALS; OPTIMIZATION; PHOTOVOLTAIC EFFECTS;

NITRIDES;

EID: 84858956723     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3690907     Document Type: Article

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