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Volumn 370, Issue , 2013, Pages 97-100

InGaN-based solar cells with a tapered GaN structure

Author keywords

A1. Etching; B2. Semiconducting III V materials; B3. Solar cells

Indexed keywords

ELECTROMAGNETIC WAVE ABSORPTION; ETCHING; GALLIUM NITRIDE; LIGHT ABSORPTION; LIGHT SCATTERING; SOLAR POWER GENERATION;

EID: 84901609822     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.09.052     Document Type: Article
Times cited : (5)

References (8)
  • 1
    • 77954471038 scopus 로고    scopus 로고
    • Enhanced the light extraction efficiency of an InGaN light emitting diodes with an embedded rhombus-like air-void structure
    • July
    • Chia-Feng Jing-Jie Dai, Guei-Miao Lin, Wang, Ming-Shiou Lin, Enhanced the light extraction efficiency of an InGaN light emitting diodes with an embedded rhombus-like air-void structure, Applied Physics Express 3 (7) (2010) 071002, July.
    • (2010) Applied Physics Express , vol.3 , Issue.7 , pp. 071002
    • Dai, C.-F.J.-J.1    Lin, G.-M.2    Wang3    Lin, M.-S.4
  • 2
    • 1542315187 scopus 로고    scopus 로고
    • Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
    • T. Fujii, Y. Gao, R. Sharma, E.L. Hu, S.P. DenBaars, S. Nakamura, Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening, Applied Physics Letters 84 (2004) 855-857.
    • (2004) Applied Physics Letters , vol.84 , pp. 855-857
    • Fujii, T.1    Gao, Y.2    Sharma, R.3    Hu, E.L.4    DenBaars, S.P.5    Nakamura, S.6
  • 4
    • 77951594861 scopus 로고    scopus 로고
    • Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells
    • I.M. Pryce, D.D. Koleske, A.J. Fischer, H.A. Atwater, Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells, Applied Physics Letters 96 (2010) 153501.
    • (2010) Applied Physics Letters , vol.96 , pp. 153501
    • Pryce, I.M.1    Koleske, D.D.2    Fischer, A.J.3    Atwater, H.A.4
  • 6
    • 77958601349 scopus 로고    scopus 로고
    • Effects of photoelectrochemical etching of N-polar and Ga-polar gallium nitride on sapphire substrates
    • Y. Jung, K.H. Baik, F. Ren, S.J. Pearton, J. Kim, Effects of photoelectrochemical etching of N-polar and Ga-polar gallium nitride on sapphire substrates, Journal of the Electrochemical Society 157 (2010) 676-678.
    • (2010) Journal of the Electrochemical Society , vol.157 , pp. 676-678
    • Jung, Y.1    Baik, K.H.2    Ren, F.3    Pearton, S.J.4    Kim, J.5
  • 8
    • 78149391875 scopus 로고    scopus 로고
    • InGaN light emitting solar cells with a roughened N-face GaN surface through a laser decomposition process
    • October
    • K.T. Chen, W.C. Huang, T.H. Hsieh, C.H. Hsieh, C.F. Lin, InGaN light emitting solar cells with a roughened N-face GaN surface through a laser decomposition process, Optics Express 18 (22) (2010) 23406-23412, October.
    • (2010) Optics Express , vol.18 , Issue.22 , pp. 23406-23412
    • Chen, K.T.1    Huang, W.C.2    Hsieh, T.H.3    Hsieh, C.H.4    Lin, C.F.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.