Conversion efficiency enhancement of GaN/In0.11Ga 0.89N solar cells with nano patterned sapphire and biomimetic surface antireflection process

IEEE Photonics Technology Letters

Volumn 23, Issue 18, 2011, Pages 1304-1306

  Wang, H W ^a   Chen, H C ^a   Chang, Y A ^b   Lin, C C ^a   Han, H W ^a   Tsai, M A ^a   Kuo, H C ^a   Yu, P ^a   Lin, S H ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b Millennium Communication Co Ltd   (Taiwan)

Author keywords

Biomimetic surface antireflection; InGaN solar cells

Indexed keywords

ANTI-REFLECTION; BIOMIMETIC SURFACES; CURRENT STRUCTURE; DOUBLE-HETEROJUNCTION; EFFICIENCY ENHANCEMENT; FILL FACTOR; INDUCTIVELY COUPLED-PLASMA REACTIVE ION ETCHING; INGAN SOLAR CELLS; PATTERN SAPPHIRE; PATTERNED SAPPHIRE; SELF-ORGANIZED;

BIOMIMETICS; CONVERSION EFFICIENCY; EFFICIENCY; HETEROJUNCTIONS; INDUCTIVELY COUPLED PLASMA; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPEN CIRCUIT VOLTAGE; ORGANIC CHEMICALS; POLYSTYRENES; REACTIVE ION ETCHING; SAPPHIRE; TWO DIMENSIONAL;

SURFACE MORPHOLOGY;

EID: 80052328844     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2011.2160051     Document Type: Article

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