SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 518, Issue 24, 2010, Pages 7377-7380

InGaN-based light-emitting solar cells with a pattern-nanoporous p-type GaN:Mg layer

(5) Chen, Kuei Ting a Lin, Chia Feng a Lin, Chun Min a Yang, Chung Chieh a Jiang, Ren Hao a

a NATIONAL CHUNG HSING UNIVERSITY (Taiwan)

Author keywords

InGaN based optoelectronic device; Photoeletrochemical (PEC) process

Indexed keywords

ABSORPTION PROPERTY; ANTI-REFLECTION; EXTERNAL QUANTUM EFFICIENCY; HIGHER EFFICIENCY; INGAN-BASED OPTOELECTRONIC DEVICE; LIGHT COUPLINGS; LIGHT OUTPUT POWER; MICRO PATTERN; NANO-POROUS; NANOPOROUS STRUCTURES; OPERATING CURRENTS; P-TYPE GAN; PHOTOELETROCHEMICAL (PEC) PROCESS; PHOTOVOLTAIC DEVICES; PHOTOVOLTAIC PROPERTY; ULTRAVIOLET REGION;

ELECTROOPTICAL DEVICES; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LINEAR TRANSFORMATIONS; OPTOELECTRONIC DEVICES; SOLAR CELLS; SOLAR POWER GENERATION;

LIGHT REFLECTION;

EID: 77956879031 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2010.05.007 Document Type: Conference Paper

Times cited : (6)

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