Improving radiation hardness of EEPROM/flash cell by N 2O annealing

IEEE Electron Device Letters

Volumn 19, Issue 7, 1998, Pages 256-258

  Huang, Tiao Yuan ^a,b,c   Jong, Fuh Cheng ^b,d   Chao, Tien Sheng ^c   Lin, Horng Chih ^c   Leu, Len Yi ^d   Young, Konrad ^a,d   Lin, Chen Hsi ^d   Chiu, Kuang Y ^a,d  

^a IEEE   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^d WINBOND ELECTRONICS CORPORATION   (Taiwan)

Author keywords

Eeprom flash cells; Horn shaped floating gate; N 2o annealing; Radiation hardness

Indexed keywords

ANNEALING; GATES (TRANSISTOR); IMPROVEMENT; NITROGEN OXIDES; PERFORMANCE; RADIATION HARDENING; ROM;

MEMORY CELLS;

SEMICONDUCTOR STORAGE;

EID: 0032122870     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.701435     Document Type: Article

References (8)

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