Fast resistive switching in WO3 thin films for non-volatile memory applications

2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009

Volumn , Issue , 2009, Pages 900-903

  Kügeler, Carsten ^a   Rosezin, Roland ^a   Weng, Robert ^a   Waser, Rainer ^a   Menzel, Stephan ^b   Klopstra, Bart ^b   Böttger, Ulrich ^b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

Resistive switching; RRAM; Solid electrolyte

Indexed keywords

CU ELECTRODE; ELECTRICAL MEASUREMENT; NON-VOLATILE MEMORY APPLICATION; RESISTIVE SWITCHING; SWITCHING CURRENTS; TUNGSTEN TRIOXIDE;

COPPER; ELECTRIC PROPERTIES; NANOTECHNOLOGY; PLATINUM; SOLID ELECTROLYTES; SWITCHING SYSTEMS; THIN FILMS; TUNGSTEN;

SWITCHING;

EID: 77951006914     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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