Growth of high quality ZnO thin films with a homonucleation on sapphire

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 31, Issue 4, 2013, Pages

  Wei, Ming ^a   Casey Boutwell, Ryan ^a   Faleev, Nikolai ^b   Osinsky, Andrei ^c   Schoenfeld, Winston V ^a  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b Arizona State University   (United States)

^c Agnitron Technology Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPE IMAGES; C-PLANE SAPPHIRE SUBSTRATES; HEXAGONAL STRUCTURES; INTERFACIAL REGION; NUCLEATION AND GROWTH; NUCLEATION LAYERS; OXYGEN PLASMA PRETREATMENT; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY;

EPITAXIAL GROWTH; FULL WIDTH AT HALF MAXIMUM; METALLIC FILMS; MOLECULAR BEAM EPITAXY; NUCLEATION; OPTICAL FILMS; SURFACE DEFECTS; SURFACE ROUGHNESS; TWO DIMENSIONAL; X RAY DIFFRACTION; ZINC OXIDE;

SAPPHIRE;

EID: 84887429677     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.4813918     Document Type: Article

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