Low-threshold electrically pumped random lasers

Advanced Materials

Volumn 22, Issue 16, 2010, Pages 1877-1881

  Zhu, Hai ^a,b   Shan, Chong Xin ^a   Zhang, Ji Ying ^a   Zhang, Zhen Zhong ^a   Li, Bing Hul ^a   Zhao, Dong Xu ^a   Yao, Bin ^a   Shen, De Zhen ^a   Fan, Xi Wu ^a   Tang, Zi Kang ^c   Hou, Xlanghui ^d   Choy, Kwang Leong ^d  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^d UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICALLY PUMPED; FUTURE APPLICATIONS; LOW THRESHOLDS; RANDOM LASERS; RANDOM LASING; SIMPLE METALS; THRESHOLD CURRENTS; ZNO; ZNO LAYERS;

LASER BEAMS; OXIDE FILMS; SEMICONDUCTOR LASERS; ZINC OXIDE;

PUMPING (LASER);

CRYSTALLIN; ZINC OXIDE;

ARTICLE; CHEMISTRY; ELECTRICITY; INSTRUMENTATION; LASER; SEMICONDUCTOR; UTILIZATION REVIEW;

CRYSTALLINS; ELECTRICITY; LASERS; SEMICONDUCTORS; ZINC OXIDE;

EID: 77951583425     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.200903623     Document Type: Article

References (26)

1. D. S. Wiersma, Nat. Phys. 2008, 4, 359.
2. D. S. Wiersma, P. Bartolini, A. Lagendijk, R. Righini, Nature 1997, 390, 671.
3. H. E. Türecl, L. Ge, S. Rotter, A. D. Stone, Science 2008, 320, 643.
4. H. Cao, Waves Random Media 2003, 13, R1.
5. D. S. Wiersma, Nature 2000, 406, 132.
6. D. S. Wiersma, S. Cavalieri, Nature 2001, 414, 708.
7. H. Cao, Y. G, Zhao, S. T. Ho, E. W, Seelig, Q. H. Wang, R. P. H. Chang, Phys. Rev. Lett. 1999, 82, 2278.
8. J. Fallert, R. J. B. Dietz, J. Sartor, D. Schneider, C. Klingshirn, H. Kalt, Nat. Photon. 2009, 3, 279.
9. S. Mujumdar, V. Tuerck, R. Torre, D. S. Wiersma, Phys. Rev. A 2007, 76, 033807.
10. S. F. Yu, C Yuen, S. P. Lau, H. W. Lee, Appl. Phys. Lett. 2004, 84, 3244.
11. E. S. P. Leong, S. F. Yu, Adv. Mater. 2006, 18, 1685.
12. E. S. P. Leong, S. F. Yu, S. P. Lau, Appl. Phys. Lett. 2006, 89, 221109.
13. S. Chu, M. Olmedo, Z. Yang, j. Y. Kong, J. L. Liu, Appl. Phys. Lett. 2008, 93, 181106.
14. X. Y. Ma, P. L. Chen, D. S. Li, Y. Y. Zhang, D. R. Yang, Appl. Phys. Lett. 2007, 97, 251109.
15. Z. K. Tang, G. K. L. Wong, P. Yu, M. Kawasaki, A. Ohtomo, H. Kolnuma, Y. Segawa, Appl. Phys. Lett. 1998, 72, 3270.
16. P. Zu, Z. K. Tang, G. K. L. Wong, M. Kawasaki, A. Ohtomo, H. Koinuma, Y. Segawa, Solid State Commun. 1997, 103, 459.
17. S. J. Jiao, Y. M. Lu, D. Z. Shen, Z. Z. Zhang, B. H. Li, J. Y. Zhang, B. Yao, Y. C. Liu, X. W. Fan, Phys. Stat. Sol. C. 2006, 4, 972.
18. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. Wiley, New York 1981.
19. J. L. Hudgins, G. S. Simin, E. Santi, M. A. Khan, IEEE Trans. Power Eledron. 2003, 18, 907.
20. H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, Z. K. Tang, Adv. Mater. 2009, 21, 1613.
21. L. A. Coldren, S. W. Corzine, Diode Lasers and Photonic Integrated Circuits, Wiley, New York 1995.
22. H. Cao, Y. G. Zhao, H. C Ong, S. T. Ho, J. Y. Dai, J. Y. Wu, R. P. H. Chang, Appl. Phys. Lett. 1998, 73, 3656.
23. H. Cao, Y. G. Zhao, H. C. Ong, R. P. H. Chang, Phys. Rev. B 1999, 59, 15107.
24. H. Cao, J. Y. Xu, S. H. Chang, S. T. Ho, Phys. Rev. E 2000, 67, 1985.
25. X. Q. Zhang, Z. K. Tang, M. Kawasaki, A. Ohtomo, H. Koinuma, J. Crystal Growth 2003, 259, 286.
26. C. X. Shan, J. Y. Zhang, B. Yao, D. Z. Shen, X. W. Fan, K. L Choy, J. Vac. Sci. Technol. B 2009, 27, 1765.