Low density of threading dislocations in AlN grown on sapphire

Journal of Applied Physics

Volumn 101, Issue 9, 2007, Pages

  Faleev, Nikolai ^a   Lu, Hai ^b   Schaff, William J ^b  

^a UNIVERSITY OF DELAWARE   (United States)

^b School of Operations Research and Industrial Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL LAYERS; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; THERMAL EXPANSION; X RAY DIFFRACTION ANALYSIS;

NUCLEATION LAYERS; RESIDUAL ELASTIC STRAIN; STRUCTURAL TRANSFORMATION; THERMAL EXPANSION MISMATCH;

DISLOCATIONS (CRYSTALS);

EID: 34248530857     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2728755     Document Type: Conference Paper

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