SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 98, Issue 22, 2011, Pages

Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors

(10) Liang, H L a Mei, Z X a Zhang, Q H a Gu, L a Liang, S a Hou, Y N a Ye, D Q a Gu, C Z a Yu, R C a Du, X L a

a INSTITUTE OF PHYSICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

CUTOFF WAVELENGTHS; DEVICE PERFORMANCE; HIGH QUALITY; IN-SITU OXIDATION; INTERFACE ENGINEERING; MICROELECTRONIC TECHNOLOGIES; P-N HETEROJUNCTIONS; POTENTIAL APPLICATIONS; SI SURFACES; SI(111) SUBSTRATE; SOLAR-BLIND; ULTRA-VIOLET PHOTODETECTORS; ULTRAVIOLET OPTOELECTRONIC DEVICES; WURTZITES;

HETEROJUNCTIONS; MICROELECTRONICS; PHOTODETECTORS; SILICON; ZINC SULFIDE;

OPTOELECTRONIC DEVICES;

EID: 79958840720 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3595342 Document Type: Article

Times cited : (45)

References (17)

1
- 0032606622
- 0003-6951, 10.1063/1.124337
- G. Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, U. K. Mishra, and E. J. Tarsa, Appl. Phys. Lett. 0003-6951 75, 247 (1999). 10.1063/1.124337
- (1999) Appl. Phys. Lett. , vol.75 , pp. 247
- Parish, G.¹ Keller, S.² Kozodoy, P.³ Ibbetson, J.P.⁴ Marchand, H.⁵ Fini, P.T.⁶ Fleischer, S.B.⁷ Denbaars, S.P.⁸ Mishra, U.K.⁹ Tarsa, E.J.¹⁰

2
- 33947582816
- Single Schottky-barrier photodiode with interdigitated-finger geometry: Application to diamond
- DOI 10.1063/1.2715440
- M. Liao, Y. Koide, and J. Alvarez, Appl. Phys. Lett. 0003-6951 90, 123507 (2007). 10.1063/1.2715440 (Pubitemid 46482283)
- (2007) Applied Physics Letters , vol.90 , Issue.12 , pp. 123507
- Liao, M.¹ Koide, Y.² Alvarez, J.³

3
- 79952679098
- 0003-6951, 10.1063/1.3563705
- Y. N. Hou, Z. X. Mei, Z. L. Liu, T. C. Zhang, and X. L. Du, Appl. Phys. Lett. 0003-6951 98, 103506 (2011). 10.1063/1.3563705
- (2011) Appl. Phys. Lett. , vol.98 , pp. 103506
- Hou, Y.N.¹ Mei, Z.X.² Liu, Z.L.³ Zhang, T.C.⁴ Du, X.L.⁵

4
- 72649106473
- 0935-9648, 10.1002/adma.200901108
- X. L. Du, Z. X. Mei, Z. L. Liu, Y. Guo, T. C. Zhang, Y. N. Hou, Z. Zhang, Q. K. Xue, and A. Yu. Kuznetsov, Adv. Mater. (Weinheim, Ger.) 0935-9648 21, 4625 (2009). 10.1002/adma.200901108
- (2009) Adv. Mater. (Weinheim, Ger.) , vol.21 , pp. 4625
- Du, X.L.¹ Mei, Z.X.² Liu, Z.L.³ Guo, Y.⁴ Zhang, T.C.⁵ Hou, Y.N.⁶ Zhang, Z.⁷ Xue, Q.K.⁸ Kuznetsov, A.Yu.⁹

5
- 57649106142
- 1882-0778, 10.1143/APEX.1.091202
- Y. Nishimoto, K. Nakahara, D. Takamizu, A. Sasaki, K. Tamura, S. Akasaka, H. Yuji, T. Fujii, T. Tanabe, H. Takasu, A. Tsukazaki, A. Ohtomo, T. Onuma, S. F. Chichibu, and M. Kawasaki, Appl. Phys. Express 1882-0778 1, 091202 (2008). 10.1143/APEX.1.091202
- (2008) Appl. Phys. Express , vol.1 , pp. 091202
- Nishimoto, Y.¹ Nakahara, K.² Takamizu, D.³ Sasaki, A.⁴ Tamura, K.⁵ Akasaka, S.⁶ Yuji, H.⁷ Fujii, T.⁸ Tanabe, T.⁹ Takasu, H.¹⁰ Tsukazaki, A.¹¹ Ohtomo, A.¹² Onuma, T.¹³ Chichibu, S.F.¹⁴ Kawasaki, M.¹⁵

6
- 69149107680
- 0022-0248, 10.1016/j.jcrysgro.2009.07.030
- Z. L. Liu, Z. X. Mei, T. C. Zhang, Y. P. Liu, Y. Guo, X. L. Du, A. Hallen, J. J. Zhu, and A. Yu. Kuznetsov, J. Cryst. Growth 0022-0248 311, 4356 (2009). 10.1016/j.jcrysgro.2009.07.030
- (2009) J. Cryst. Growth , vol.311 , pp. 4356
- Liu, Z.L.¹ Mei, Z.X.² Zhang, T.C.³ Liu, Y.P.⁴ Guo, Y.⁵ Du, X.L.⁶ Hallen, A.⁷ Zhu, J.J.⁸ Kuznetsov, A.Yu.⁹

7
- 77955721320
- 0003-6951, 10.1063/1.3475402
- M. Brandt, M. Lange, M. Stolzel, A. Muller, G. Benndorf, J. Zippel, J. Lenzner, M. Lorenz, and M. Grundmann, Appl. Phys. Lett. 0003-6951 97, 052101 (2010). 10.1063/1.3475402
- (2010) Appl. Phys. Lett. , vol.97 , pp. 052101
- Brandt, M.¹ Lange, M.² Stolzel, M.³ Muller, A.⁴ Benndorf, G.⁵ Zippel, J.⁶ Lenzner, J.⁷ Lorenz, M.⁸ Grundmann, M.⁹

8
- 0038387298
- 0003-6951, 10.1063/1.1576309
- W. Yang, S. S. Hullavarad, B. Nagaraj, I. Takeuchi, R. P. Sharma, and T. Venkatesan, Appl. Phys. Lett. 0003-6951 82, 3424 (2003). 10.1063/1.1576309
- (2003) Appl. Phys. Lett. , vol.82 , pp. 3424
- Yang, W.¹ Hullavarad, S.S.² Nagaraj, B.³ Takeuchi, I.⁴ Sharma, R.P.⁵ Venkatesan, T.⁶

9
- 18444380301
- Molecular beam epitaxial growth of hexagonal ZnMgO films on Si(1 1 1) substrates using thin MgO buffer layer
- DOI 10.1016/j.jcrysgro.2005.01.022, PII S002202480500031X, 13th International Conference on Molecular Beam Epitaxy
- M. Fujita, M. Sasajima, Y. Deesirapipat, and Y. Horikosh, J. Cryst. Growth 0022-0248 278, 293 (2005). 10.1016/j.jcrysgro.2005.01.022 (Pubitemid 40643362)
- (2005) Journal of Crystal Growth , vol.278 , Issue.1-4 , pp. 293-298
- Fujita, M.¹ Sasajima, M.² Deesirapipat, Y.³ Horikoshi, Y.⁴

10
- 58149171635
- 0003-6951, 10.1063/1.3054347
- C. Jin, W. Wei, H. Zhou, T. -H. Yang, and R. J. Narayan, Appl. Phys. Lett. 0003-6951 93, 251102 (2008). 10.1063/1.3054347
- (2008) Appl. Phys. Lett. , vol.93 , pp. 251102
- Jin, C.¹ Wei, W.² Zhou, H.³ Yang, T.-H.⁴ Narayan, R.J.⁵

11
- 18444399372
- Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (1 1 1)-oriented Si substrate toward UV-detector applications
- DOI 10.1016/j.jcrysgro.2005.01.021, PII S0022024805000291, 13th International Conference on Molecular Beam Epitaxy
- K. Koike, K. Hama, I. Nakashima, G. -y. Takada, K. -i. Ogata, S. Sasa, M. Inoue, and M. Yano, J. Cryst. Growth 0022-0248 278, 288 (2005). 10.1016/j.jcrysgro.2005.01.021 (Pubitemid 40643361)
- (2005) Journal of Crystal Growth , vol.278 , Issue.1-4 , pp. 288-292
- Koike, K.¹ Hama, K.² Nakashima, I.³ Takada, G.-Y.⁴ Ogata, K.-I.⁵ Sasa, S.⁶ Inoue, M.⁷ Yano, M.⁸

12
- 6144261628
- 0021-8979, 10.1063/1.362677
- M. Razeghi and A. Rogalski, J. Appl. Phys. 0021-8979 79, 7433 (1996). 10.1063/1.362677
- (1996) J. Appl. Phys. , vol.79 , pp. 7433
- Razeghi, M.¹ Rogalski, A.²

13
- 14044271428
- Epitaxial growth of zinc oxide thin films on silicon
- DOI 10.1016/j.mseb.2004.12.003, PII S092151070400618X
- C. Jin, R. Narayan, A. Tiwari, H. Zhou, A. Kvit, and J. Narayan, Mater. Sci. Eng., B 0921-5107 117, 348 (2005). 10.1016/j.mseb.2004.12.003 (Pubitemid 40274984)
- (2005) Materials Science and Engineering B: Solid-State Materials for Advanced Technology , vol.117 , Issue.3 , pp. 348-354
- Jin, C.¹ Narayan, R.² Tiwari, A.³ Zhou, H.⁴ Kvit, A.⁵ Narayan, J.⁶

14
- 1242332874
- 0021-4922, 10.1143/JJAP.42.7209
- N. Kawamoto, M. Fujita, T. Tatsumi, and Y. Horikoshi, Jpn. J. Appl. Phys., Part 1 0021-4922 42, 7209 (2003). 10.1143/JJAP.42.7209
- (2003) Jpn. J. Appl. Phys., Part 1 , vol.42 , pp. 7209
- Kawamoto, N.¹ Fujita, M.² Tatsumi, T.³ Horikoshi, Y.⁴

15
- 34247248916
- Low-temperature interface engineering for high-quality ZnO epitaxy on Si(111) substrate
- DOI 10.1063/1.2722225
- X. N. Wang, Y. Wang, Z. X. Mei, J. Dong, Z. Q. Zeng, H. T. Yuan, T. C. Zhang, and X. L. Du, Appl. Phys. Lett. 0003-6951 90, 151912 (2007). 10.1063/1.2722225 (Pubitemid 46609835)
- (2007) Applied Physics Letters , vol.90 , Issue.15 , pp. 151912
- Wang, X.N.¹ Wang, Y.² Mei, Z.X.³ Dong, J.⁴ Zeng, Z.Q.⁵ Yuan, H.T.⁶ Zhang, T.C.⁷ Du, X.L.⁸ Jia, J.F.⁹ Xue, Q.K.¹⁰ Zhang, X.N.¹¹ Zhang, Z.¹² Li, Z.F.¹³ Lu, W.¹⁴

16
- 0032619850
- 0031-9007, 10.1103/PhysRevLett.82.2749
- M. H. Xie, S. M. Seutter, W. K. Zhu, L. X. Zheng, H. Wu, and S. Y. Tong, Phys. Rev. Lett. 0031-9007 82, 2749 (1999). 10.1103/PhysRevLett.82.2749
- (1999) Phys. Rev. Lett. , vol.82 , pp. 2749
- Xie, M.H.¹ Seutter, S.M.² Zhu, W.K.³ Zheng, L.X.⁴ Wu, H.⁵ Tong, S.Y.⁶

17
- 77957739485
- 0021-8979, 10.1063/1.3485600
- Y. Sawai, K. Hazu, and S. F. Chichibu, J. Appl. Phys. 0021-8979 108, 063541 (2010). 10.1063/1.3485600
- (2010) J. Appl. Phys. , vol.108 , pp. 063541
- Sawai, Y.¹ Hazu, K.² Chichibu, S.F.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.