Smooth surface, low electron concentration, and high mobility ZnO films on c-plane sapphire

Journal of Crystal Growth

Volumn 325, Issue 1, 2011, Pages 36-40

  Chu, Sheng ^a,b   Morshed, Muhammad ^a,b   Li, Lin ^a,b   Huang, Jian ^a,b   Liu, Jianlin ^a,b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

A3. Molecular beam epitaxy; B2. ZnO

Indexed keywords

A3. MOLECULAR BEAM EPITAXY; ACCEPTOR DOPING; C-PLANE SAPPHIRE; C-PLANE SAPPHIRE SUBSTRATES; DEVICE ENGINEERING; ELECTRON CONCENTRATION; HIGH MOBILITY; MGO BUFFER LAYER; MGO-BUFFER; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; SMOOTH SURFACE; STRUCTURAL AND ELECTRICAL PROPERTIES; ZNO; ZNO FILMS; ZNO THIN FILM;

ELECTRIC PROPERTIES; EPITAXIAL GROWTH; FILM GROWTH; METALLIC FILMS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SAPPHIRE; SURFACE ROUGHNESS; X RAY DIFFRACTION; ZINC OXIDE;

SEMICONDUCTOR DOPING;

EID: 79958731392     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.04.036     Document Type: Article

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