Coherent X-ray scattering phenomenon in highly disordered epitaxial AIN films

Physica Status Solidi (A) Applied Research

Volumn 162, Issue 2, 1997, Pages 529-535

  Metzger, T ^a   Hopler R ^a   Born, E ^a   Christiansen, S ^b   Albrecht, M ^b   Strunk, H P ^b   Ambacher, O ^c   Stutzmann, M ^c   Stommer R ^d   Schuster, M ^d   Gobel H ^d  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^c WALTER SCHOTTKY INSTITUT   (Germany)

^d SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTROMAGNETIC WAVE SCATTERING; EPITAXIAL GROWTH; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

ALUMINUM NITRIDE; ROCKING CURVES; X RAY SCATTERING;

SEMICONDUCTING FILMS;

EID: 0031208723     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(199708)162:2<529::AID-PSSA529>3.0.CO;2-A     Document Type: Article

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