Strain and crystal defects in thin AlN/GaN structures on (0001) SiC

Journal of Applied Physics

Volumn 107, Issue 11, 2010, Pages

  Faleev, N ^a   Levin, I ^b  

^a Arizona State University   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ALN LAYERS; DEFECT POPULATION; ELASTIC STRAIN; ELASTIC STRESS; EXTENDED DEFECT; GAN LAYERS; GROWTH CONDITIONS; HETEROSTRUCTURES; HIGH RESOLUTION X RAY DIFFRACTION; INITIAL STAGES; METALORGANIC CHEMICAL VAPOR DEPOSITION; MOCVD; ORDER OF MAGNITUDE; PLANAR DEFECT; RECIPROCAL SPACE MAPPING; ROCKING CURVES; STRAIN LEVELS; STRUCTURAL TRANSFORMATION; THREADING DISLOCATION;

CRYSTAL GROWTH; CRYSTALS; DEFECTS; DEPOSITION RATES; DISLOCATIONS (CRYSTALS); EPITAXIAL FILMS; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; POINT DEFECTS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE; STACKING FAULTS; STRAIN CONTROL; STRAIN RELAXATION; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

STRAIN RATE;

EID: 77953637804     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3437632     Document Type: Article

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