Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si(001) and Ge(001) substrates: II - Transmission electron microscopy and atomic force microscopy

Journal of Crystal Growth

Volumn 365, Issue , 2013, Pages 35-43

  Faleev, N ^a   Sustersic, N ^b,e   Bhargava, N ^b   Kolodzey, J ^b   Magonov, S ^c   Smith, D J ^d   Honsberg, C ^a  

^a Arizona State University   (United States)

^b UNIVERSITY OF DELAWARE   (United States)

^c NT MDT Development Inc   (United States)

^d ARIZONA STATE UNIVERSITY   (United States)

^e INTEL CORPORATION   (United States)

Author keywords

A1. Characterization; A1. Defects; A3. Molecular beam epitaxy; B1. Germanium silicon alloys

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRON MICROSCOPY; EPITAXIAL GROWTH; GERMANIUM; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SILICON; SILICON ALLOYS; SUBSTRATES; SURFACE DEFECTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

CRYSTAL PERFECTION; DEFECT CREATION; DEVICE APPLICATION; EPITAXIAL STRUCTURE; GROWTH CONDITIONS; STRUCTURAL FEATURE; STRUCTURAL INVESTIGATION; STRUCTURAL TRANSFORMATION;

CRYSTAL ATOMIC STRUCTURE;

EID: 84888359953     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.11.067     Document Type: Article

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