Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si(0 0 1) and Ge(0 0 1) substrates: I - High-resolution x-ray diffraction and x-ray topography

Journal of Crystal Growth

Volumn 365, Issue , 2013, Pages 44-53

  Faleev, N ^a   Sustersic, N ^b,d   Bhargava, N ^b   Kolodzey, J ^b   Kazimirov, A Yu ^c   Honsberg, C ^a  

^a Arizona State University   (United States)

^b UNIVERSITY OF DELAWARE   (United States)

^c Cornell University ^*  (United States)

^d INTEL CORPORATION   (United States)

Author keywords

A1. Characterization; A1. Defects; A3. Molecular beam epitaxy; B1. Germanium silicon alloys

Indexed keywords

CRYSTAL STRUCTURE; DEFECT DENSITY; DEFECTS; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; GERMANIUM; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; RATE CONSTANTS; SILICON ALLOYS; SPATIAL DISTRIBUTION; SUBSTRATES; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

CRYSTAL PERFECTION; DEFECT CREATION; EPITAXIAL STRUCTURE; GROWTH CONDITIONS; HIGH RESOLUTION X RAY DIFFRACTION; STRUCTURAL FEATURE; STRUCTURAL INVESTIGATION; X-RAY TOPOGRAPHY;

CRYSTAL DEFECTS;

EID: 84888373369     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.12.002     Document Type: Article

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