A ZnO/ZnMgO multiple-quantum-well ultraviolet random laser diode

IEEE Electron Device Letters

Volumn 32, Issue 1, 2011, Pages 54-56

  Long, Hao ^a   Fang, Guojia ^a   Li, Songzhan ^a,b   Mo, Xiaoming ^a   Wang, Haoning ^a   Huang, Huihui ^a   Jiang, Qike ^a   Wang, Jianbo ^a   Zhao, Xingzhong ^a  

^a WUHAN UNIVERSITY   (China)

^b WUHAN TEXTILE UNIVERSITY   (China)

Author keywords

Electroluminescence (EL); multiple quantum wells (MQWs); random laser; ultraviolet (UV); ZnO

Indexed keywords

FORWARD BIAS; LASING PEAKS; LOW THRESHOLD CURRENT DENSITY; MULTIPLE QUANTUM WELLS; RADIO-FREQUENCY MAGNETRON SPUTTERING SYSTEM; RANDOM LASERS; RANDOM LASING; ROOM TEMPERATURE; ULTRA-VIOLET; VISIBLE EMISSIONS; ZNO; ZNO/ZNMGO;

DIODES; ELECTROLUMINESCENCE; GALLIUM NITRIDE; LASER BEAMS; QUANTUM WELL LASERS; ULTRAVIOLET LASERS; ZINC OXIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 78650921158     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2089424     Document Type: Conference Paper

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