Fundamental performance limits of carbon nanotube thin-film transistors achieved using hybrid molecular dielectrics

ACS Nano

Volumn 6, Issue 8, 2012, Pages 7480-7488

  Sangwan, Vinod K ^a   Ortiz, Rocio Ponce ^b   Alaboson, Justice M P ^a   Emery, Jonathan D ^a   Bedzyk, Michael J ^a,b   Lauhon, Lincoln J ^a   Marks, Tobin J ^a,b   Hersam, Mark C ^a,b  

^a Northwestern University   (United States)

^b NORTHWESTERN UNIVERSITY   (United States)

Author keywords

density gradient ultracentrifugation; mobility; nanoelectronics; self assembled nanodielectrics; subthreshold swing; transconductance

Indexed keywords

AMBIENT CONDITIONS; CARBON NANOTUBE TRANSISTORS; CONVENTIONAL DESIGN; DEVICE PERFORMANCE; FIELD-EFFECT MOBILITIES; FUNDAMENTAL PERFORMANCE LIMITS; HIGH-PURITY; HYBRID INORGANIC-ORGANIC; NANODIELECTRICS; ON/OFF RATIO; REAL-WORLD APPLICATION; SELF ASSEMBLY PROCESS; SEMICONDUCTING CARBON NANOTUBES; SUBTHRESHOLD SWING; SYNERGISTIC COMBINATIONS; TRANSISTOR PERFORMANCE; ULTRACENTRIFUGATION; WIDE-RANGING APPLICATIONS;

CARRIER MOBILITY; CENTRIFUGATION; COMMERCE; GATE DIELECTRICS; MATERIALS PROPERTIES; NANOELECTRONICS; SEMICONDUCTING FILMS; THIN FILM TRANSISTORS; TRANSCONDUCTANCE;

CARBON NANOTUBES;

CARBON NANOTUBE;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMISTRY; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; IMPEDANCE; MATERIALS TESTING; PARTICLE SIZE; SEMICONDUCTOR; ULTRASTRUCTURE;

ELECTRIC IMPEDANCE; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MATERIALS TESTING; MEMBRANES, ARTIFICIAL; NANOTUBES, CARBON; PARTICLE SIZE; TRANSISTORS, ELECTRONIC;

EID: 84865596834     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn302768h     Document Type: Article

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