A fully tunable single-walled carbon nanotube diode

Nano Letters

Volumn 11, Issue 4, 2011, Pages 1782-1785

  Liu, Chang Hua ^a   Wu, Chung Chiang ^a   Zhong, Zhaohui ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

backward diode; band to band tunneling; Single walled carbon nanotube; tunable diode

Indexed keywords

BACKWARD DIODES; BAND GAP ENERGY; BAND TO BAND TUNNELING; BUILDING BLOCKES; DEVICE DESIGN; DIODE STRUCTURE; FORWARD BIAS; GATE VOLTAGES; IDEAL DIODES; NON-LINEARITY; SINGLE-WALLED CARBON; TUNABLE DIODE; TUNABLE NANOTUBES; TURN ON VOLTAGE;

DIODES;

SINGLE-WALLED CARBON NANOTUBES (SWCN);

CARBON NANOTUBE;

ARTICLE; CHEMISTRY; EQUIPMENT; EQUIPMENT DESIGN; MATERIALS TESTING; PARTICLE SIZE; SEMICONDUCTOR; ULTRASTRUCTURE;

EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MATERIALS TESTING; NANOTUBES, CARBON; PARTICLE SIZE; SEMICONDUCTORS;

EID: 79954503623     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl200371z     Document Type: Article

References (25)

1. Chau, R.; Doyle, B.; Datta, S.; Kavalieros, J.; Zhang, K. Nat. Mater. 2007, 6, 810-812
2. Lonergan, M. C. Science 1997, 278, 2103-2106
3. Zhou, Y. X.; Gaur, A.; Hur, S. H.; Kocabas, C.; Meitl, M. A.; Shim, M.; Rogers, J. A. Nano Lett. 2004, 4, 2031-2035
4. Boettcher, S. W.; Strandwitz, N. C.; Schierhorn, M.; Lock, N.; Lonergan, M. C.; Stucky, G. D. Nat. Mater. 2007, 6, 592-596
5. Avouris, P.; Chen, Z. H.; Perebeinos, V. Nat. Nanotechnol. 2007, 2, 605-615
6. Avouris, P.; Freitag, M.; Perebeinos, V. Nat. Photonics 2008, 2, 341-350
7. Dresselhaus, M. D.; Dresselhaus, G.;; Avouris, P. Carbon Nanotubes: Synthesis, Structure Properties and Applications; Springer-Verlag: Berlin, 2001.
8. Lee, J. U.; Gipp, P. P.; Heller, C. M. Appl. Phys. Lett. 2004, 85, 145-147
9. Bosnick, K.; Gabor, N.; McEuen, P. Appl. Phys. Lett. 2006, 89 163121
10. Lee, J. U. Appl. Phys. Lett. 2005, 87 073101
11. Lee, J. U. Phys. Rev. B 2007, 75 075409
12. Wu, C. C.; Liu, C. H.; Zhong, Z. H. Nano Lett. 2010, 10, 1032-1036
13. Chen, J.; Perebeinos, V.; Freitag, M.; Tsang, J.; Fu, Q.; Liu, J.; Avouris, P. Science 2005, 310, 1171-1174
14. Mueller, T.; Kinoshita, M.; Steiner, M.; Perebeinos, V.; Bol, A. A.; Farmer, D. B.; Avouris, P. Nat. Nanotechnol. 2010, 5, 27-31
15. Gabor, N. M.; Zhong, Z. H.; Bosnick, K.; Park, J.; McEuen, P. L. Science 2009, 325, 1367-1371
16. Appenzeller, J.; Lin, Y. M.; Knoch, J.; Avouris, P. Phys. Rev. Lett. 2004, 93 196805
17. Appenzeller, J.; Radosavljevic, M.; Knoch, J.; Avouris, Ph. Phys. Rev. Lett. 2004, 92 048301
18. Jena, D.; Fang, T.; Zhang, Q.; Xing, H. L. Appl. Phys. Lett. 2008, 93 112106
19. Leonard, F.; Tersoff, J. Phys. Rev. Lett. 2000, 85, 4767-4770
20. Sze, S. M.; Nq, K. K. Physics of Semiconductor Devices; Wiley: New York, 2006.
21. Heinze, S.; Tersoff, J.; Martel, R.; Derycke, V.; Appenzeller, J.; Avouris, P. Phys. Rev. Lett. 2002, 89 106801
22. Appenzeller, J.; Knoch, J.; Derycke, V.; Martel, R.; Wind, S.; Avouris, P. Phys. Rev. Lett. 2002, 89 126801
23. Knoch, J.; Appenzeller, J. Phys. Status Solidi A 2008, 205, 679-694
24. Schulman, J. N.; Chow, D. H. IEEE Electron Device Lett. 2000, 21, 353-355
25. Park, S. Y.; Yu, R.; Chung, S. Y.; Berger, P. R.; Thompson, P.; Fay, P. Electron. Lett. 2007, 43, 295-296