Manipulation of electron orbitals in hard-wall InAs/InP nanowire quantum dots

Nano Letters

Volumn 11, Issue 4, 2011, Pages 1695-1699

  Roddaro, Stefano ^a   Pescaglini, Andrea ^a,b   Ercolani, Daniele ^a   Sorba, Lucia ^a   Beltram, Fabio ^a,b  

^a SCUOLA NORMALE SUPERIORE   (Italy)

^b ISTITUTO ITALIANO DI TECNOLOGIA   (Italy)

Author keywords

Coulomb blockade; energy spectrum; high temperature; InAs InP; Nanowire; quantum dot

Indexed keywords

CONTROLLED MODIFICATION; ELECTRON FILLING; ELECTRON ORBITAL; ELECTRONIC ORBITALS; ENERGY SPECTRA; FREE CARRIERS; HIGH TEMPERATURE; INAS/INP; LIQUID NITROGEN TEMPERATURE; LOCAL GATE ELECTRODES; NOVEL TECHNIQUES; QUANTUM DOT; QUANTUM LEVELS; SINGLE ELECTRON; SINGLE-PARTICLE ENERGY; SPIN MANIPULATION; TIME-RESOLVED; TRANSVERSE ELECTRIC FIELD; WORKING TEMPERATURES;

COULOMB BLOCKADE; DISPLAY DEVICES; ELECTRIC FIELDS; ELECTRIC WIRE; LIQUID NITROGEN; NANOWIRES; SEMICONDUCTOR QUANTUM DOTS; SPECTROSCOPY;

SINGLE ELECTRON TRANSISTORS;

INDIUM; INDIUM ARSENIDE; INDIUM PHOSPHIDE; NANOMATERIAL; ORGANOARSENIC DERIVATIVE; PHOSPHINE DERIVATIVE; QUANTUM DOT;

ARTICLE; CHEMISTRY; ELECTROMAGNETIC FIELD; ELECTRON; MATERIALS TESTING; PARTICLE SIZE; RADIATION EXPOSURE;

ARSENICALS; ELECTROMAGNETIC FIELDS; ELECTRONS; INDIUM; MATERIALS TESTING; NANOSTRUCTURES; PARTICLE SIZE; PHOSPHINES; QUANTUM DOTS;

EID: 79954538716     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl200209m     Document Type: Article

References (32)

1. Lieber, C. M. Nanoscale science and technology: Building a big future from small things MRS Bull. 2003, 28, 486-491
2. Thelander, C.; Agarwal, P.; Brongersma, S.; Eymery, J.; Feiner, L. F.; Forchel, A.; Scheffler, M.; Riess, W.; Ohlsson, B. J.; Gosele, U.; Samuelson, L. Nanowire-based one-dimensional electronics Mater. Today 2006, 9, 28
3. Björk, M. T.; Ohlsson, B. J.; Sass, T.; Persson, A. I.; Thelander, C.; Magnusson, M. H.; Deppert, K.; Wallenberg, L. R.; Samuelson, L. One-dimensional Steeplechase for Electrons Realized Nano Lett. 2002, 2, 87
4. Jiang, X.; Xiong, Q.; Nam, S.; Qian, F.; Li, Y.; Lieber, C. M. InAs/InP Radial Nanowire Heterostructures as High Electron Mobility Devices Nano Lett. 2007, 7, 3214
5. Caroff, P.; Wagner, J. B.; Dick, K. A.; Nilsson, H. A.; Jeppsson, M.; Deppert, K.; Samuelson, L.; Wallenberg, L. R.; Wernersson, L.-E. High-Quality InAs/InSb Nanowire Heterostructures Grown by Metal-Organic Vapor-Phase Epitaxy Small 2008, 4, 878
6. Ercolani, D.; Rossi, F.; Li, A.; Roddaro, S.; Grillo, V.; Salviati, G.; Beltram, F.; Sorba, L. InAs/InSb nanowire heterostructures grown by chemical beam epitaxy Nanotechnology 2009, 20 505605
7. Lugani, L.; Ercolani, D.; Rossi, F.; Salviati, G.; Beltram, F.; Sorba, L. Faceting of InAs-InSb Heterostructured Nanowires Cryst. Growth Des. 2010, 10, 4038
8. Nilsson, H. A.; Caroff, P.; Thelander, C.; Larsson, M.; Wagner, J. B.; Wernersson, L.-E.; Samuelson, L.; Xu, H. Q. Giant, Level-Dependent g Factors in InSb Nanowire Quantum Dots Nano Lett. 2009, 9, 3151
9. Fasth, C.; Fuhrer, A.; Samuelson, L.; Golovach, V. N.; Loss, D. Direct Measurement of the Spin-Orbit Interaction in a Two-Electron InAs Nanowire Quantum Dot Phys. Rev. Lett. 2007, 98 266801
10. Roddaro, S.; Fuhrer, A.; Brusheim, P.; Fasth, C.; Xu, H. Q.; Samuelson, L.; Xiang, J.; Lieber, C. M. Spin States of Holes in Ge/Si Nanowire Quantum Dots Phys. Rev. Lett. 2008, 101 186802
11. Doh, Y.-J.; van Dam, J. A.; Roest, A. L.; Bakkers, E. P. A. M.; Kouwenhoven, L. P.; De Franceschi, S. Tunable Supercurrent Through Semiconductor Nanowires Science 2005, 309, 272
12. Xiang, J.; Vidan, A.; Tinkham, M.; Westervelt, R. M.; Lieber, C. M. Ge/Si nanowire mesoscopic Josephson junctions Nat. Nanotechnol. 2006, 1, 208
13. Roddaro, S.; Pescaglini, A.; Ercolani, D.; Sorba, L.; Giazotto, F.; Beltram, F. Hot-electron Effects in InAs Nanowire Josephson Junctions Nano Res. 2011, 4, 259-265
14. Thelander, C.; Fröberg, L. E.; Rehnstedt, C.; Samuelson, L.; Wernersson, L.-E. Vertical Enhancement-Mode InAs Nanowire Field-Effect Transistor With 50-nm Wrap Gate IEEE Electron Device Lett. 2008, 29, 206
15. Egard, M.; Johansson, S.; Johansson, A. C.; Persson, K. M.; Dey, A. W.; Borg, B. M.; Thelander, C.; Wernersson, L.-E.; Lind, E. Vertical InAs Nanowire Wrap Gate Transistors with f(t)>7 GHz and f(Max)>20 GHz Nano Lett. 2010, 10, 809
16. Roddaro, S.; Nilsson, K.; Astromskas, G.; Samuelson, L.; Wernersson, L.-E.; Karlström, O.; Wacker, A. InAs nanowires metal-oxide-semiconductor capacitors Appl. Phys. Lett. 2008, 92 253509
17. Svensson, C. P.; Martensson, T.; Trägardh, J.; Larsson, C.; Rask, M.; Hessman, D.; Samuelson, L.; Ohlsson, J. Monolithic GaAs/InGaP nanowire light emitting diodes on silicon Nanotechnology 2008, 19 305201
18. Tomioka, K.; Motohisa, J.; Hara, S.; Hiruma, K.; Fukui, T. GaAs/AlGaAs Core Multishell Nanowire-Based Light-Emitting Diodes on Si Nano Lett. 2010, 10, 1639
19. Björk, M. T.; Thelander, C.; Hansen, A. E.; Jensen, L. E.; Larsson, M. W.; Wallenberg, L. R.; Samuelson, L. Few electron quantum dots in semiconductor nanowires Nano Lett. 2004, 4, 1621
20. Björk, M. T.; Fuhrer, A.; Hansen, A. E.; Larsson, M. W.; Fröberg, L. E.; Samuelson, L. Tunable effective g factor in InAs nanowire quantum dots Phys. Rev. B 2005, 72 201307
21. Fuhrer, A.; Fröberg, L. E.; Pedersen, J. N.; Larsson, M. W.; Wacker, A.; Pistol, M.-E.; Samuelson, L. Few Electron Double Quantum Dots in InAs/InP Nanowire Heterostructures Nano Lett. 2007, 7, 243
22. Thelander, C.; Martensson, T.; Björk, M. T.; Ohlsson, B. J.; Larsson, M. W.; Wallenberg, L. R.; Samuelson, L. Single-electron transistors in heterostructure nanowires Appl. Phys. Lett. 2003, 83, 2052
23. Ford, A. C.; Ho, J. C.; Chen, Y.-L.; Tseng, Y.-C.; Fan, Z.; Guo, J.; Bokor, J.; Javey, A Diameter-Dependent Electron Mobility of InAs Nanowires Nano Lett. 2009, 9, 360
24. Hu, S. F.; Wong, W. Z.; Liu, S. S.; Wu, Y. C.; Sung, C. L.; Huang, T. Y.; Yang, T. J. A Silicon Nanowire with a Coulomb Blockade Effect at Room Temperature Adv. Mater. 2002, 10, 736
25. Shin, S. J.; Jung, C. S.; Park, B. J.; Yoon, T. K.; Lee, J. J.; Kim, S. J.; Choi, J. B.; Takahashi, Y.; Hasko, D. G. Si-based ultrasmall multiswitching single-electron transistor operating at room-temperature Appl. Phys. Lett. 2010, 97 103101
26. The absolute electronic filling is based on the identification of the N = 0 configuration, which is signaled by the absence of further conduction modes even at large finite-biases (up to 30-40 mV) and at high temperatures (up to about 75 K). See also Supporting Information. Shell structrures similar to the ones reported in ref 19 were also observed in the studied devices.
27. Beenakker, C. W. J. Theory of Coulomb-blockade oscillations in the conductance of a quantum dot Phys. Rev. B 1991, 44, 1646
28. Calculations were performed using the partial differential equation solver COMSOL MultiPhysics.
29. De, A.; Pryor, C. E. Predicted band structures of III-V semiconductors in the wurtzite phase Phys. Rev. B 2010, 81 155210
30. http://www.ioffe.ru/SVA/NSM/Semicond/InAs/electric.html.
31. Hanson, R.; Kouwenhoven, L. P.; Petta, J. R.; Tarucha, S.; Vandersypen, L. M. K. Spins in few-electron quantum dots Rev. Mod. Phys. 2007, 79, 1217
32. Suyatin, D. B.; Thelander, C.; Björk, M. T.; Maximov, I.; Samuelson, L. Sulfur passivation for ohmic contact formation to InAs nanowires Nanotechnology 2007, 18 105307