Electrical and optical characterization of individual GaSb nanowires

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7224, Issue , 2009, Pages

  Xu, Wei ^a   Chin, Alan ^b   Ye, Laura ^b   Ning, Cun Zheng ^a,b   Yu, Hongbin ^a  

^a Arizona State University   (United States)

^b NASA AMES RESEARCH CENTER   (United States)

Author keywords

Gallium antimonides; Nanowires; Schottky barrier; Transistors

Indexed keywords

ASYMMETRIC CURRENTS; BEFORE AND AFTER; ELECTRICAL TRANSPORT MEASUREMENTS; NANOWIRE TRANSISTORS; ON/OFF RATIO; OPTICAL CHARACTERIZATION; ORDERS OF MAGNITUDE; RAMAN SPECTRA; SCHOTTKY BARRIER; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY CONTACTS; SINGLE WIRES; TEMPERATURE DEPENDENT;

ARRHENIUS PLOTS; ELECTRIC WIRE; GALLIUM; GALLIUM ALLOYS; NANOCLUSTERS; NANOWIRES; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR QUANTUM DOTS;

FIELD EFFECT TRANSISTORS;

EID: 65649114765     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.816931     Document Type: Conference Paper

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