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Journal of Applied Physics

Volumn 109, Issue 3, 2011, Pages

A single-electron transistor and an even-odd effect in chemically synthesized Ge nanowires

(4) Huang, Shaoyun a Shin, Sung Kwon a,b Fukata, Naoki c,d Ishibashi, Koji a,b

a RIKEN (Japan)

b TOKYO INSTITUTE OF TECHNOLOGY (Japan)

c NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

d JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION ENERGY; BACK-GATE; CHARGING ENERGIES; COULOMB OSCILLATION; ELECTRON SPINS; EVEN-ODD EFFECT; GERMANIUM NANOWIRES; LOW TEMPERATURES; MANY ELECTRON; MONOCRYSTALLINE; PEAK AMPLITUDE; PEAK SPACING; QUANTUM DOT; SINGLE ELECTRON; STABILITY DIAGRAM;

ELECTRONS; GERMANIUM; NANOWIRES; SPIN DYNAMICS;

SINGLE ELECTRON TRANSISTORS;

EID: 79951834254 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3544354 Document Type: Article

Times cited : (11)

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- The absolute number of electrons residing in the dot is not known. The number noted in the inset of Fig. should be considered as a relative number when zero is defined at some gate voltage.

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