Advantages of top-gate, high-k dielectric carbon nanotube field-effect transistors

Applied Physics Letters

Volumn 88, Issue 11, 2006, Pages

  Yang, M H ^a   Teo, K B K ^a   Gangloff, Laurent ^a   Milne, W I ^a   Hasko, D G ^a   Robert, Y ^b   Legagneux, P ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b THALES RESEARCH AND TECHNOLOGY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; CHEMICAL VAPOR DEPOSITION; ELECTRON TUBES; GATES (TRANSISTOR); HYSTERESIS; THRESHOLD VOLTAGE;

CHIRALITY; GATE CONFIGURATION; SUBTHRESHOLD SLOPE;

FIELD EFFECT TRANSISTORS;

EID: 33645154057     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2186100     Document Type: Article

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