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Volumn 37, Issue 9, 1997, Pages 1353-1366

Low temperature characterization of silicon CMOS devices

Author keywords

[No Author keywords available]

Indexed keywords

HOT CARRIERS; IONIZATION OF SOLIDS; LEAKAGE CURRENTS; LOW TEMPERATURE OPERATIONS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS;

EID: 0031232505     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(97)00007-3     Document Type: Article
Times cited : (65)

References (13)
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  • 2
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    • Special issue, IEEE Trans Electron Dev., 1989, 36(8).
    • (1989) IEEE Trans Electron Dev. , vol.36 , Issue.8 SPEC. ISSUE
  • 3
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    • Cold electronics: An overview
    • Kirschman, R. K., Cold electronics: an overview. Cryogenics, 1985, 25, 115.
    • (1985) Cryogenics , vol.25 , pp. 115
    • Kirschman, R.K.1
  • 4
    • 0018541474 scopus 로고
    • Time dependence of depletion region formation in phosphorus doped silicon MOS devices at cryogenic temperatures
    • Saks, N. S. and Nordbryn, A., Time dependence of depletion region formation in phosphorus doped silicon MOS devices at cryogenic temperatures. J. Appl. Phys., 1979, 50, 6962.
    • (1979) J. Appl. Phys. , vol.50 , pp. 6962
    • Saks, N.S.1    Nordbryn, A.2
  • 5
    • 0020126963 scopus 로고
    • Transient response of n-channel metal-oxide-semiconductor field effect transistors during turn-on at 10-25 K
    • Tewksbury, S., Transient response of n-channel metal-oxide-semiconductor field effect transistors during turn-on at 10-25 K. J. Appl. Phys., 1982, 53, 3865.
    • (1982) J. Appl. Phys. , vol.53 , pp. 3865
    • Tewksbury, S.1
  • 6
    • 0022753907 scopus 로고
    • Short channel effect in MOSFETs at liquid nitrogen temperature
    • Woo, J. C. and Plummer, J. D., Short channel effect in MOSFETs at liquid nitrogen temperature. IEEE Trans Electron Dev., 1986, ED-33, 1012.
    • (1986) IEEE Trans Electron Dev. , vol.ED-33 , pp. 1012
    • Woo, J.C.1    Plummer, J.D.2
  • 7
    • 0025430936 scopus 로고
    • Measurements and modelling of the n-channel MOSFET inversion layer mobility and device characteristics in the temperature range 60-300 K
    • Huang, C. and Gildenblat, S., Measurements and modelling of the n-channel MOSFET inversion layer mobility and device characteristics in the temperature range 60-300 K. IEEE Trans Electron Dev., 1990, ED-37, 1289.
    • (1990) IEEE Trans Electron Dev. , vol.ED-37 , pp. 1289
    • Huang, C.1    Gildenblat, S.2
  • 8
    • 0023315830 scopus 로고
    • Influence of substrate freeze-out on the characteristics of MOS transistors at very low temperature
    • Balestra, F., Audaire, L. and Lucas, C., Influence of substrate freeze-out on the characteristics of MOS transistors at very low temperature. Solid State Electron., 1987, 30, 321.
    • (1987) Solid State Electron. , vol.30 , pp. 321
    • Balestra, F.1    Audaire, L.2    Lucas, C.3
  • 10
    • 0025403373 scopus 로고
    • Reduction of kink effect in short channel MOS transistors
    • Hafez, I. M., Ghibaudo, G. and Balestra, F., Reduction of kink effect in short channel MOS transistors. IEEE Electron Device Lett., 1990, EDL-11, 120.
    • (1990) IEEE Electron Device Lett. , vol.EDL-11 , pp. 120
    • Hafez, I.M.1    Ghibaudo, G.2    Balestra, F.3
  • 11
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    • Brief review of the MOS device physics for low temperature electronics
    • Balestra, F. and Ghibaudo, G., Brief review of the MOS device physics for low temperature electronics. Solid State Electron., 1994, 37, 1967.
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    • Balestra, F.1    Ghibaudo, G.2
  • 13
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    • Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces
    • Sun, S. C. and Plummer, J. D., Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces. IEEE Trans Electron Dev., 1980, ED-27, 1497.
    • (1980) IEEE Trans Electron Dev. , vol.ED-27 , pp. 1497
    • Sun, S.C.1    Plummer, J.D.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.