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Volumn 114, Issue 15, 2013, Pages

In situ study of the role of substrate temperature during atomic layer deposition of HfO2 on InP

(10) Dong, H a Santosh, K C a Qin, X a Brennan, B a McDonnell, S a Zhernokletov, D b Hinkle, C L a,b Kim, J a Cho, K a,b Wallace, R M a,b

a The University of Texas at Dallas (United States)

b UNIVERSITY OF TEXAS AT DALLAS (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL STATE; DENSITY FUNCTIONALS; IN-SITU STUDY; NATIVE OXIDES; OXIDATION STATE; SELF CLEANING; SITU X-RAY PHOTOELECTRON SPECTROSCOPY; SUBSTRATE TEMPERATURE;

ATOMIC LAYER DEPOSITION; DEPOSITION; HAFNIUM OXIDES; PHOTOELECTRONS; X RAY PHOTOELECTRON SPECTROSCOPY;

SUBSTRATES;

EID: 84886516420 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4825218 Document Type: Article

Times cited : (14)

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