Effect of post deposition anneal on the characteristics of HfO 2/InP metal-oxide-semiconductor capacitors

Applied Physics Letters

Volumn 99, Issue 17, 2011, Pages

  Galatage, R V ^a   Dong, H ^a   Zhernokletov, D M ^b   Brennan, B ^a   Hinkle, C L ^a   Wallace, R M ^a,b   Vogel, E M ^a,c  

^a The University of Texas at Dallas   (United States)

^b UNIVERSITY OF TEXAS AT DALLAS   (United States)

^c Georgia Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; BONDING STATE; CAPACITANCE VOLTAGE MEASUREMENTS; ENERGY DISTRIBUTIONS; INP; INTERFACE STATE; INTERFACE TRAP DENSITY; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; NATIVE OXIDES; POST DEPOSITION ANNEALING; POST-DEPOSITION ANNEAL;

CONDUCTION BANDS; ELECTRON MOBILITY; PHOTOELECTRON SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

HAFNIUM OXIDES;

EID: 80555145169     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3656001     Document Type: Article

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